07APR2014 Search Results

Contextual Info: ESDA5-1BF4 Low clamping single line bidirectional ESD protection Datasheet - production data Features • Low clamping voltage: 11 V IEC 61000-4-2 contact discharge 8 kV at 30 ns • Bidirectional device • Low leakage current • 0201 package • Ultra low PCB area: 0.18 mm2

Contextual Info: STW81200 Multi-band RF fractional/integer frequency synthesizer with integrated VCOs Datasheet - preliminary data • Supply Voltage: 3.0 V to 5.4 V • Small size exposed pad VFQFPN36 package • 6 x 6 x 1.0 mm • Process: BICMOS 0.25 µm SiGe VFQFPN36 Applications

STHV800

Contextual Info: STHV800 Octal ±90 V, ±2 A, 3-level RTZ, high-speed ultrasound pulser Data brief • • • • TFLGA-56LD 8x8x0.9 mm Fully integrated real clamping-to-ground function − 8 Ω synchronous active clamp − ±2 A source and sink current Fully integrated TR switch

Contextual Info: STM32L15xQC STM3215xRC-A STM32L15xVC-A STM32L15xZC Ultra-low-power 32b MCU ARM -based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC, memory I/F Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply

Contextual Info: STM32L15xxD Ultra-low-power 32b MCU ARM -based Cortex®-M3, 384KB Flash, 48KB SRAM, 12KB EEPROM, LCD, USB, ADC, DAC, memory I/F Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range

PA66-GF

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C 20 COPYRIGHT 2 3 1 20 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - P A2 +0.3 27.4-0.5 D DESCRIPTION LTR DATE REDRAWN ECR-14-006262 14MAY2014 DWN APVD M.G. M.G. D 10.0 0.2 3.0 0.5 6.0 C 12.0 32.2 26.6 9.3 7.4

Contextual Info: STM32L15xQC STM3215xRC-A STM32L15xVC-A STM32L15xZC Ultra-low-power 32b MCU ARM -based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range

Contextual Info: STL34N65M5 N-channel 650 V, 0.099 Ω typ., 22.5 A MDmesh V Power MOSFET in PowerFLAT™ 8x8 HV package Datasheet - production data Features 6  6  6  %RWWRPYLHZ *  '  Order code VDS @ TJmax RDS on max ID STL34N65M5 710 V 0.120 Ω 22.5 A(1) 1. The value is rated according to Rthj-case and limited by

STF24N60M2

Contextual Info: STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.19 Ω 18 A STF24N60M2