07SEP09 Search Results
07SEP09 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tyco 17105-3608
Abstract: 17105-3608 tyco
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ECO-08-017443 ECO-09-021826 23JUL08 07SEP09 01SEP04 tyco 17105-3608 17105-3608 tyco | |
100CLContextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S C O R P O R A T IO N . P U B L IC A T IO N R IG H T S RESERVED. 2 LOC D IS T AD 00 REVISIO N S D E S C R IP T IO N R- R E V IS E D PER DWN 07SEP09 |
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EC0-09-020932 07SEP09 28JAN85 29JANB5 100CL, 100CL | |
Contextual Info: VLCPG5100 Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused 19223 DESCRIPTION The VLCPG5100 is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted plastic case utilize the |
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VLCPG5100 VLCPG5100 18-Jul-08 | |
Contextual Info: SPICE Device Model SiR168DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR168DP 18-Jul-08 | |
SiR422DPContextual Info: SPICE Device Model SiR422DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
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SiR422DP 18-Jul-08 | |
"IR Sensor"
Abstract: ir sensor ir sensor module TSOP98238 ir repeater ir sensor, "IR repeater" of 555 for ir sensor REMOTE SENSOR S 28 preamplifier AGC remote
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TSOP98238 18-Jul-08 "IR Sensor" ir sensor ir sensor module TSOP98238 ir repeater ir sensor, "IR repeater" of 555 for ir sensor REMOTE SENSOR S 28 preamplifier AGC remote | |
sir418dpContextual Info: SPICE Device Model SiR418DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
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SiR418DP 18-Jul-08 | |
sharp laser diodes
Abstract: TSOP855
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vse-db0090-1010 sharp laser diodes TSOP855 | |
Contextual Info: VS-FCSP0530TR www.vishay.com Vishay Semiconductors FlipKY , Chip Scale Package Schottky Barrier Rectifier, 0.5 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm • Low thermal resistance • Supplied tested and on tape and reel |
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VS-FCSP0530TR 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VLCPG5100 Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused 19223 DESCRIPTION The VLCPG5100 is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted plastic case utilize the |
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VLCPG5100 JESD22-A114-B 2002/95/EC 2002/96/EC 11-Mar-11 | |
Contextual Info: VS-FCSP05H40TR www.vishay.com Vishay Semiconductors FlipKY , Chip Scale Package Schottky Barrier Rectifier, 0.5 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm • Low thermal resistance • Supplied tested and on tape and reel |
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VS-FCSP05H40TR 2002/95/EC 11-Mar-11 | |
Contextual Info: VLCS5830 Vishay Semiconductors High Brightness LED, ∅ 5 mm Untinted Non-Diffused FEATURES • • • • • • 19223 DESCRIPTION The VLC.58. series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity and a very small emission angle is required. |
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VLCS5830 JESD22-A114-B 2002/95/EC 2002/96/EC AEC-Q101 18-Jul-08 | |
Contextual Info: VS-FCSP0530TR www.vishay.com Vishay Semiconductors FlipKY , Chip Scale Package Schottky Barrier Rectifier, 0.5 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm • Low thermal resistance • Supplied tested and on tape and reel |
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VS-FCSP0530TR 2002/95/EC 11-Mar-11 | |
D2PAK-6
Abstract: 12TQ 12TQ045S 40HFL40S02 IRFP460
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12TQ035SPbF, 12TQ040SPbF, 12TQ045SPbF 2002/95/EC AEC-Q101 18-Jul-08 D2PAK-6 12TQ 12TQ045S 40HFL40S02 IRFP460 | |
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Contextual Info: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved |
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SiHF8N50L O-220 2002/95/EC SiHF8N50L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: QW24T25033 DC-DC Converter 18-60 VDC Input; 3.3 VDC @ 25 A Output Data Sheet Features Applications • Telecommunications Data communications Wireless communications Servers, workstations Industrial applications Benefits High efficiency – no heat sink required |
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QW24T25033 TR-332, ZD-00374 07-Sep-09 | |
DFN (Divider)
Abstract: DFNA
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J-STD-020 2002/95/EC 18-Jul-08 DFN (Divider) DFNA | |
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 480705 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 480705 ,4 8 0 7 0 5 LOC ALL RIGHTS RESERVED. CM DIST R E V IS IO N S 00 LTR AP AP1 DESCRIPTION DATE REVISED PER E C O - 0 9 - 0 0 9 128 15APR09 |
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31MAR2000 ECO-09-0091 15APR09 ECO-09-021826 07SEP09 28JUL04 | |
EIA-364-52Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . D DIAGRAM 4.1 MAX — 3.0 — C if 0.4 MAX _J R0.2 ALL AROUND DIM A |
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31MAR2000 02AUG07 ECO-09-020935 07SEP09 UL94V-0, 50MILLIAMPS 10MICROAMPS 2002/95/EC 27JAN2003 030CT01 EIA-364-52 | |
Contextual Info: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiA444DJT SC-70-6L-Single SC-70 2002/95/EC SiA444DJT-T1-GE3 11-Mar-11 | |
DG4157Contextual Info: DG4157 Vishay Siliconix Low Voltage, 1-Ω Single SPDT Analog Switch 1:2 Multiplexer with Power Down Protection DESCRIPTION FEATURES The DG4157 is a high performance single pole double throw analog switch designed for 1.65 V to 5.5 V operation with single power rail. |
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DG4157 DG4157 11-Mar-11 | |
Contextual Info: 10CTQ150SPbF, 10CTQ150-1PbF Vishay High Power Products Schottky Rectifier, 2 x 5 A FEATURES 10CTQ150-1PbF 10CTQ150SPbF • • • • • Base common cathode 2 Base common cathode 2 • 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK |
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10CTQ150SPbF, 10CTQ150-1PbF 10CTQ150SPbF 2002/95/EC O-262 18-Jul-08 | |
Contextual Info: 10TQ035SPbF, 10TQ045SPbF Vishay High Power Products Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical |
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10TQ035SPbF, 10TQ045SPbF 2002/95/EC AEC-Q101 17any 18-Jul-08 | |
Contextual Info: VS-FCSP07H40TR www.vishay.com Vishay Semiconductors FlipKY , Chip Scale Package Schottky Barrier Rectifier, 0.75 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm • Low thermal resistance • Supplied tested and on tape and reel |
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VS-FCSP07H40TR 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |