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    077N12NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC077N12NS3GATMA1

    Power MOSFET, N Channel, 120 V, 98 A, 7.7 MilliOhms, TDSON, 8 Pins, Surface Mount - Tape and Reel (Alt: BSC077N12NS3GATMA1)
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    Avnet Americas BSC077N12NS3GATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics BSC077N12NS3GATMA1
    • 1 $3.47
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    Newark BSC077N12NS3GATMA1 Tape & Reel 5,000
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    Bristol Electronics BSC077N12NS3GATMA1 1,559
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    TME BSC077N12NS3GATMA1 5,000
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    NexGen Digital BSC077N12NS3GATMA1 22
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    EBV Elektronik BSC077N12NS3GATMA1 53 Weeks 5,000
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    Win Source Electronics BSC077N12NS3GATMA1 10,700
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    Infineon Technologies AG BSC077N12NS3 G

    MOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC077N12NS3 G
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    Bristol Electronics BSC077N12NS3 G 895
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    Infineon Technologies AG BSC077N12NS3G

    Power Field-Effect Transistor, 98A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA BSC077N12NS3G 5,150
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    Win Source Electronics BSC077N12NS3G 11,510
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    Infineon Technologies AG BSC077N12NS3GXT

    Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Vyrian BSC077N12NS3GXT 380
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    077N12NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    077n12ns

    Abstract: BSC077N12NS3 G BSC077N12NS3 IEC61249-2-21 JESD22 DA-160
    Contextual Info: 077N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS on ,max 7.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 98 A PG-TDSON-8 • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC077N12NS3 IEC61249-2-21 077N12NS 077n12ns BSC077N12NS3 G IEC61249-2-21 JESD22 DA-160 PDF

    077N12NS

    Abstract: 12098a BSC077N12NS3 JESD22 077N12N
    Contextual Info: 077N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 7.7 mΩ ID 98 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC077N12NS3 077N12NS 077N12NS 12098a JESD22 077N12N PDF