06JUN2006 Search Results

Contextual Info: 4 TH 1S DRAW 1NG C 3 I S UNPUBL 1S H E D . C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 2 20 LOC REVISIONS D I ST R E SE RV ED. P LTR D E S C R 1P T 1ON DATE RELEASE TO A CT I VE A 06JUN2006

ST1S03APMR

Abstract: schematic diagram dc-dc 12 to 5v/1,5A JESD97 ST1S03A ST1S03AIPMR ST1S03AIPUR ST1S03APUR
Contextual Info: ST1S03A 1.5A, 1.5 MHz Adjustable, with inhibit function Step-down switching regulator in DFN6 3x3 Features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Internal soft start for start-up current limitation and power on delay of 50-100µs

JESD97

Abstract: STS15N4LL
Contextual Info: STS15N4LL N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LL 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description

STGW40NC60WD

Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
Contextual Info: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

Contextual Info: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio

P75NS04Z

Contextual Info: STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET General features Type VDSS RDS on ID STP75NS04Z Clamped < 11mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature

ST1S06A

Abstract: 1S0633 ST1S06 ST1S06APUR ST1S06PU12R ST1S06PU33R ST1S06PUR ST1S06XX12
Contextual Info: ST1S06xx Synchronous rectification with inhibit, 1.5 A, 1.5 MHz fixed or adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2% DC output voltage tolerance ■ Synchronous rectification ■ Inhibit function

ST1S06

Abstract: ST1S06A ST1S06APUR ST1S06PM33 ST1S06PU12R ST1S06PU33R ST1S06PUR ST1S06XX12 ST1S0 dfn 3x3 footprint
Contextual Info: ST1S06xx Synchronous rectification with inhibit, 1.5 A, 1.5 MHz fixed or adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2% DC output voltage tolerance ■ Synchronous rectification ■ Inhibit function

Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •

gp10nc60k

Abstract: RG 2006 10A 600V JESD97 STGB10NC60K STGB10NC60KT4 STGD10NC60K STGP10NC60K
Contextual Info: STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K STGD10NC60K 600V 600V 600v <2.5V <2.5V <2.5V 10A 10A 10A

STL80N4LLF3

Abstract: JESD97 L80N4LLF3 st MARKING E4
Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio

TE 108-18717

Abstract: 114-18387 0-1241388-2 ECR-11-007727
Contextual Info: T H I S DRA W IN G I S U N P U B L I S H E D . VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C R E L E A S E D FOR P U B L I C A T I O N FREI FUER VEROEFFENTLICHUNG ALL R IG H T S R E S E R V E D . AII F RFCHTF VDRRFHAI TFN. C OP Y R I G H T 2005 200S MATED WITH:

Contextual Info: ST1S03A 1.5 A, 1.5 MHz adjustable, with inhibit function step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for start-up current limitation and power on delay of 50-100 µs

Contextual Info: ST1S03A 1.5A, 1.5 MHz Adjustable, with inhibit function Step-down switching regulator in DFN6 3x3 PRELIMINARY DATA General features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Internal soft start for start-up current limitation

Contextual Info: ST1S06 Synchronous rectification with inhibit, 1.5A, 1.5 MHz fixed or adjustable, step-down switching regulator in DFN6 3x3 General features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Synchronous rectification

STEP-DOWN SWITCHING REGULATOR IN DFN6

Contextual Info: ST1S06 Synchronous rectification with inhibit, 1.5A, 1.5 MHz fixed or adjustable, step-down switching regulator in DFN6 3x3 General features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Synchronous rectification

Contextual Info: ST1S03A 1.5 A, 1.5 MHz adjustable, with inhibit function step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for start-up current limitation and power on delay of 50-100 µs

diode met st

Abstract: Vdss 1500V
Contextual Info: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC RESERVED. R E V ISIONS DIST 00 GP LTR DESCRIPTION DATE DWN APVD R E V PE R ECO - 0 8 - 0 0 8 0 3 5 08APR2008 RG PD R E V PE R E C O - 0 8 - 0 1 6 2 8 7

ST AN2349 PFC

Abstract: N27-E20 an2349 ptc c884 ba159 st make e20 220v EF20 TRANSFORMER EFD25/13 Voltage Regulator Circuit e20 220v 200V Zener Diode
Contextual Info: AN2349 Application note Simple cost-effective PFC using Bipolar Transistors for low-to-medium power HF Ballasts Introduction This note deals with the implementation of a Power Factor Correction PFC in a Discontinuous-mode Boost Converter where a PFC stage is achieved with a power bipolar

TSOP48 outline

Abstract: AI-0065 st 339 TSOP32 TSOP56 TSOP*56 pd0003 TSOP56 Package Tape
Contextual Info: PD0003 Packing information Thin Small Outline packages for memory products Tape and Reel shipping media Introduction Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 250 and 2500 devices.

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC RESERVED. CE REV ISIONS D I ST 00 LTR DE S C R I P T I O N 06J1JN2006 R E L PER NPR 0 6 - 0 4 6 5 * DWN DATE EJH APVD DB MATER I A L :

FV4N150

Abstract: JESD97 STFV4N150
Contextual Info: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching