MSM06065G1
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650V silicon carbide Schottky diode with 6A continuous forward current, extremely fast switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for high-frequency applications. |
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MS2TH32065G1
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Maplesemi
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650V Silicon Carbide Schottky diode with 32A continuous forward current, 1.8V typical forward voltage at 16A and 25°C, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved thermal stability. |
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MS2H40065G1
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Maplesemi
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650V silicon carbide Schottky rectifier diode with 20A continuous forward current per leg, fast switching, low forward voltage of 1.85V typical at 20A, and operating junction temperature up to 175°C. |
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NCE3065G
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NCEPOWER
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NCE3065G is a channel enhancement mode power MOSFET with 30V drain-source voltage, 65A continuous drain current, and low on-resistance of 5.7mΩ typical at 10V gate-source voltage, housed in a DFN5x6-8L package. |
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MSP02065G1
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Maplesemi
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650V silicon carbide Schottky diode with continuous forward current of 2.1A at 150°C, fast switching, high-frequency operation, and positive temperature coefficient on VF, housed in a TO-220-2L package. |
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MSP04065G1
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Maplesemi
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650V silicon carbide Schottky diode with 4.8A continuous forward current, fast switching, low forward voltage of 1.8V at 4A, and operating junction temperature up to 175°C, suitable for high-frequency power applications. |
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MSP06065G1
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Maplesemi
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650V silicon carbide Schottky diode with 22A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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MSB08065G1
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Maplesemi
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650V Silicon Carbide Schottky diode with continuous forward current of 8A at 150°C, fast switching, high-frequency operation, and positive temperature coefficient on VF in TO-263 package. |
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MSP08065G1
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Maplesemi
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650V Silicon Carbide Schottky diode with 8A continuous forward current, 1.4V typical forward voltage at 8A and 25°C, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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MSNP06065G1
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Maplesemi
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650V Silicon Carbide Schottky diode with continuous forward current of 6A at 135°C, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved efficiency and thermal stability. |
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NCE6065G
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NCEPOWER
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60V, 65A NCE6065G DFN5X6-8L power MOSFET with advanced trench technology, RDS(ON) less than 6.3 mΩ at VGS = 10V, low gate charge, and high current capability for load switching and PWM applications. |
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MSP16065G1
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Maplesemi
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650V silicon carbide Schottky diode with 16A continuous forward current, extremely fast switching, temperature-independent behavior, positive temperature coefficient on VF, and high-frequency operation capability in a TO-220-2L package. |
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MSD02065G1
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Maplesemi
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650V Silicon Carbide Schottky Diode with 2.1A continuous forward current, 14A surge current, fast switching, positive temperature coefficient, and low thermal resistance of 3.22 C/W for high-efficiency power applications. |
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MSD04065G1
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Maplesemi
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650V Silicon Carbide Schottky diode with 4.8A continuous forward current, featuring high-speed switching, low forward voltage of 1.65V at 4A, and operating junction temperature up to 175°C in a TO-252 package. |
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MSNP04065G1
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Maplesemi
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650V silicon carbide Schottky diode with 4.8A continuous forward current, fast switching, positive temperature coefficient on VF, and low capacitive charge, suited for high-frequency power applications in industrial, server, and solar inverter systems. |
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MSM04065G1
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Maplesemi
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650V silicon carbide Schottky diode with 4.8A continuous forward current, extremely fast switching, high-frequency operation, and positive temperature coefficient on VF, housed in a DFN 5x6 package. |
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MSP10065G1
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Maplesemi
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650V silicon carbide Schottky diode with 10A continuous forward current, extremely fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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MSD10065G1
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Maplesemi
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650V silicon carbide Schottky diode with 10A continuous forward current, extremely fast switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for high-frequency and high-efficiency power applications. |
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MS2H16065G1
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Maplesemi
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650V Silicon Carbide Schottky diode with 8A continuous forward current, extremely fast switching, positive temperature coefficient on VF, and high-frequency operation capability in a TO-247-3L package. |
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MSP20065G1
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Maplesemi
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650V silicon carbide Schottky diode with 20A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, housed in a TO-220-2L package. |
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MSM06065G1
