065/G Search Results
065/G Datasheets (28)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MS2TH32065G1
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Maplesemi | 650V Silicon Carbide Schottky diode with 32A continuous forward current, 1.8V typical forward voltage at 16A and 25°C, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved thermal stability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSM06065G1
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Maplesemi | 650V silicon carbide Schottky diode with 6A continuous forward current, extremely fast switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for high-frequency applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MS2H40065G1
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Maplesemi | 650V silicon carbide Schottky rectifier diode with 20A continuous forward current per leg, fast switching, low forward voltage of 1.85V typical at 20A, and operating junction temperature up to 175°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSP02065G1
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Maplesemi | 650V silicon carbide Schottky diode with continuous forward current of 2.1A at 150°C, fast switching, high-frequency operation, and positive temperature coefficient on VF, housed in a TO-220-2L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE3065G
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NCEPOWER | NCE3065G is a channel enhancement mode power MOSFET with 30V drain-source voltage, 65A continuous drain current, and low on-resistance of 5.7mΩ typical at 10V gate-source voltage, housed in a DFN5x6-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSP04065G1
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Maplesemi | 650V silicon carbide Schottky diode with 4.8A continuous forward current, fast switching, low forward voltage of 1.8V at 4A, and operating junction temperature up to 175°C, suitable for high-frequency power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSB08065G1
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Maplesemi | 650V Silicon Carbide Schottky diode with continuous forward current of 8A at 150°C, fast switching, high-frequency operation, and positive temperature coefficient on VF in TO-263 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSP08065G1
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Maplesemi | 650V Silicon Carbide Schottky diode with 8A continuous forward current, 1.4V typical forward voltage at 8A and 25°C, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSP06065G1
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Maplesemi | 650V silicon carbide Schottky diode with 22A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE6065G
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NCEPOWER | 60V, 65A NCE6065G DFN5X6-8L power MOSFET with advanced trench technology, RDS(ON) less than 6.3 mΩ at VGS = 10V, low gate charge, and high current capability for load switching and PWM applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSD04065G1
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Maplesemi | 650V Silicon Carbide Schottky diode with 4.8A continuous forward current, featuring high-speed switching, low forward voltage of 1.65V at 4A, and operating junction temperature up to 175°C in a TO-252 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSD02065G1
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Maplesemi | 650V Silicon Carbide Schottky Diode with 2.1A continuous forward current, 14A surge current, fast switching, positive temperature coefficient, and low thermal resistance of 3.22 C/W for high-efficiency power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSNP06065G1
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Maplesemi | 650V Silicon Carbide Schottky diode with continuous forward current of 6A at 135°C, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved efficiency and thermal stability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSP16065G1
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Maplesemi | 650V silicon carbide Schottky diode with 16A continuous forward current, extremely fast switching, temperature-independent behavior, positive temperature coefficient on VF, and high-frequency operation capability in a TO-220-2L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MS2TH40065G1
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Maplesemi | 650V silicon carbide diode with continuous forward current up to 40A, fast switching, high-frequency operation, and positive temperature coefficient on VF for improved efficiency and thermal stability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSH20065G1
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Maplesemi | 650V silicon carbide Schottky diode with 20A continuous forward current, ultrafast switching, high-frequency operation, positive temperature coefficient on VF, and low capacitive charge of 65nC at 400V. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSP20065G1
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Maplesemi | 650V silicon carbide Schottky diode with 20A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, housed in a TO-220-2L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSD10065G1
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Maplesemi | 650V silicon carbide Schottky diode with 10A continuous forward current, extremely fast switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for high-frequency and high-efficiency power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MSL06065G1
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Maplesemi | 650V Silicon Carbide Schottky Diode with continuous forward current up to 6A, fast switching, high-frequency operation, and operating junction temperature from -55 to +175°C in a DFN 8x8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MS2H16065G1
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Maplesemi | 650V Silicon Carbide Schottky diode with 8A continuous forward current, extremely fast switching, positive temperature coefficient on VF, and high-frequency operation capability in a TO-247-3L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
065/G Price and Stock
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FLIP ELECTRONICS NCP1077P065GIC OFFLINE SWITCH FLYBACK 7DIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NCP1077P065G | Tube | 33,250 | 1,000 |
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Buy Now | |||||
FLIP ELECTRONICS NCP1076ABP065GIC OFFLINE SWITCH FLYBACK 7DIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NCP1076ABP065G | Tube | 14,100 | 1,000 |
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Buy Now | |||||
Rochester Electronics LLC NCP1076ABP065GNCP1076 - ENHANCED OFF LINE SWIT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NCP1076ABP065G | Bulk | 4,598 | 202 |
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Buy Now | |||||
Rochester Electronics LLC NCV1075P065GAUTOMOTIVE HIGH VOLTAGE SWITCHIN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NCV1075P065G | Bulk | 4,000 | 244 |
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Buy Now | |||||
Taiwan Semiconductor TSCDT12065G1DIODE SIC 650V 12A TO220AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSCDT12065G1 | Tube | 990 | 1 |
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Buy Now | |||||
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TSCDT12065G1 | Tube | 30 Weeks | 4,000 |
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Buy Now | |||||
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TSCDT12065G1 | 15 Weeks | 2,000 |
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Get Quote | ||||||