JMSH0602AC
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 1.8mΩ N-channel Power MOSFET in TO-220-3L and TO-263-3L packages, with 195A continuous drain current, low gate charge, and ultra-low on-resistance for power management and switching applications. |
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JMSH0602AK
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Jiangsu JieJie Microelectronics Co Ltd
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60V 2.2mΩ N-Ch Power MOSFET in TO-252-3L package with 195A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management, motor driving, and switching applications. |
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JMSL0602AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at VGS = 10V, 2.4 mΩ at VGS = 4.5V, 172A continuous drain current, and 48 nC total gate charge, housed in a PDFN5x6-8L package. |
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JMSH0602AEQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 2.0mΩ N-Ch Power MOSFET in TO-263-3L package, with 224A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0602AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 1.9 mΩ typical RDS(ON) at 10 V VGS, 168 A continuous drain current, and low gate charge, suitable for high-efficiency power applications. |
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JMSH0602AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.9mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 175A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for power management and motor driving applications. |
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JMSH0602AE
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at 10 V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, 195 A maximum drain current, and 100% UIS tested reliability. |
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JMSL0602AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-Ch Power MOSFET in PDFN5x6-8L package with 1.8 mΩ typical RDS(ON) at 10V VGS, 154A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSH0602AC
