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    059N15N3 Search Results

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    059N15N3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPT059N15N3ATMA1

    MOSFET N-CH 150V 155A 8HSOF
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    DigiKey () IPT059N15N3ATMA1 Cut Tape 2,544 1
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    IPT059N15N3ATMA1 Digi-Reel 2,544 1
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    IPT059N15N3ATMA1 Tape & Reel 2,000 2,000
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    Avnet Americas IPT059N15N3ATMA1 Tape & Reel 16 Weeks 2,000
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    Mouser Electronics IPT059N15N3ATMA1 1,369
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    Newark () IPT059N15N3ATMA1 Cut Tape 1
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    IPT059N15N3ATMA1 Tape & Reel 2,000
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    Rochester Electronics IPT059N15N3ATMA1 48,080 1
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    TME IPT059N15N3ATMA1 1
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    Rutronik IPT059N15N3ATMA1 Tape & Reel 22,000 2,000
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    Chip One Stop IPT059N15N3ATMA1 Cut Tape 4,548 0 Weeks, 1 Days 1
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    Chip Stock IPT059N15N3ATMA1 23,825
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    EBV Elektronik IPT059N15N3ATMA1 6,000 17 Weeks 2,000
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    IBS Electronics IPT059N15N3ATMA1 1
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    Maritex IPT059N15N3ATMA1 3,000 1
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    Win Source Electronics IPT059N15N3ATMA1 18,080
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    Infineon Technologies AG IPT059N15N3

    MOSFETs TRENCH >=100V
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    Mouser Electronics IPT059N15N3 2,164
    • 1 $4.87
    • 10 $3.98
    • 100 $3.22
    • 1000 $2.71
    • 10000 $2.30
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    ComSIT USA IPT059N15N3 2,325
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    Win Source Electronics IPT059N15N3 19,018
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    059N15N3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    059N15N3

    Abstract: IPT059N15N3 62WS
    Contextual Info: 059N15N3 OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 5.9 mW ID 155 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    IPT059N15N3 IEC61249-2-21 059N15N3 059N15N3 IPT059N15N3 62WS PDF

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,150V 059N15N3 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,150V 059N15N3 1Description HSOF Features Tab •N-channel,normallevel


    Original
    IPT059N15N3 IEC61249-2-21 PDF

    059N15N3

    Contextual Info: 059N15N3 OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 5.9 mW ID 155 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    IPT059N15N3 IEC61249-2-21 059N15N3 059N15N3 PDF