The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TPS2056AD Texas Instruments 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85
LM25056APSQ/NOPB Texas Instruments 17-V PMBus Current/Voltage/Power/Temperature Monitor 24-WQFN -40 to 125
TPS2056ADRG4 Texas Instruments 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85
LM5056APMHE/NOPB Texas Instruments 80V, Uni-Directional, High-Side only, Current/Voltage/Power/Thermal Monitor, PMBus Out 28-HTSSOP -40 to 125
LM5056APMH/NOPB Texas Instruments 80V, Uni-Directional, High-Side only, Current/Voltage/Power/Thermal Monitor, PMBus Out 28-HTSSOP -40 to 125
LM25056APSQX/NOPB Texas Instruments 17-V PMBus Current/Voltage/Power/Temperature Monitor 24-WQFN -40 to 125

056A-AVR-10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
potentiometer 4k7

Abstract: moteur a courant continu 12v moteur a courant continu 12 v V10910 moteur dc 12v moteur 12v Relais ac tacho potenziometro lineare motor fuse moteur a courant continu
Text: 0-200% (torque) 5s 0.25 - 10 seconds DEC Deceleration 0.25 - 10 seconds T1 Current trip , (12) = 10 to 17 volts dc Temperature derating occurs between _50¡C to , equivalent to 200% of the continuous current rating for 10 seconds. The load compensation may be increased , L IR OL ACC DEC T1 T2 15A 0.25 - 10 sekunden High speed Low speed Load , provided in RS technical literature. DEC: Geschwindigkeitsabnahme 0.25 - 10 sekunden T1 Current


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PDF V10910 potentiometer 4k7 moteur a courant continu 12v moteur a courant continu 12 v V10910 moteur dc 12v moteur 12v Relais ac tacho potenziometro lineare motor fuse moteur a courant continu
2005 - 4 pin 9v

Abstract: No abstract text available
Text: -15 -15 3.5 - 10 21 20.0 150 -40 to +150 V V A mA mA W °C °C Recommended maximum , =10V Idq=0.7A f=2.15GHz 50 30 40 25 30 20 20 15 10 10 0 10 15 20 25 PAE(%) Gp(dB) Po(dBm) 35 60 30 Pin(dBm) 45 VD= 10 (V) Idq=0.7(A) 40 Pin=25dBm Po(dBm) 35 Pin=20dBm 30 Pin=15dBm 25 Pin=10dBm 20 15 10 2.00 , . Pin freq.=2.5GHz 1.0 25 0.8 Ig(RF)(mA) Id(RF)(A) 30 0.6 0.4 Tc=80deg.c Tc


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PDF MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 4 pin 9v
Not Available

Abstract: No abstract text available
Text: . 10 Revision History , - 25 20 2.0 2.6 - 570 - 10 20 3.0 4.0 - 470 - 30 , 70 Derating linear from 25C per dice IF (mA) VR (V) (mA/C) 0.28 InGaP 120 0.3 *Duty 1/ 10 , : 590nm Typ. Iv= 10 mcd Typ. @ QBSS561AG QBSS560AG QBSS561AG QBSS560AG IF = 20mA/ Color: 570nm Typ. Iv , 750 Page 10 of 11 QBSS56ZXX 0.56” Single Digit Display


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PDF QBSS56ZXX
2005 - 60Ghz

Abstract: MGF0952P 211G idq042a
Text: dissipation Cannel temperature Storage temperature Unit -15 -15 3.5 - 10 21 20.0 150 -40 to +150 , 10 10 0 10 15 20 25 PAE(%) Gp(dB) Po(dBm) 35 60 30 Pin(dBm) 45 VD= 10 (V) Idq=0.7(A) 40 Pin=25dBm Po(dBm) 35 Pin=20dBm 30 Pin=15dBm 25 Pin=10dBm 20 15 10 2.00 Pin=5dBm 2.05 2.10 2.15 2.20 2.25 2.30 Freq(GHz) (2 , =0.7A Gp,Po,Id(RF),Ig(RF) v.s. Pin Po v.s. Pin freq.=2.5GHz Ig(RF) v.s. Pin freq.=2.5GHz 1.0


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PDF MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 60Ghz 211G idq042a
Not Available

Abstract: No abstract text available
Text: Page 1 of 10 QBTS56ZXX 0.56” Three Digit Display , . 10 Disclaimer . 10 Product: QBTS56ZXX Date: March 24, 2014 Version# 1.1 Page 2 of 10 QBTS56ZXX 0.56â , Product: QBTS56ZXX Date: March 24, 2014 Version# 1.1 Page 3 of 10 QBTS56ZXX 0.56” Three Digit , 2.6 - 570 - 10 Absolute Maximum Rating Material Pd (mW) AllnGaP 70


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PDF QBTS56ZXX
2009 - 18 pin 7 segment display

Abstract: No abstract text available
Text: Data Sheet No. HCD88532 Version of 1.2 Page 1/ 10 0.56” Quad Digits Numeric Display HCD88532 , Data Sheet No. HCD88532 Version of 1.2 Page 2/ 10 0.56” Quad Digits Numeric Display HCD88532 , Data Sheet No. HCD88532 Version of 1.2 Page 3/ 10 0.56” Quad Digits Numeric Display HCD88532 , . HCD88532 Version of 1.2 Page 4/ 10 0.56” Quad Digits Numeric Display HCD88532 Absolute maximum , Peak Current Per Segment( 1/ 10 Duty Cycle, 0.1ms pulse width ) IF (Peak) 80 mA Operating


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PDF HCD88532 18 pin 7 segment display
Not Available

Abstract: No abstract text available
Text: . 10 Revision History , 70 Derating linear from 25C per dice IF (mA) VR (V) (mA/C) 0.28 InGaP 120 0.3 *Duty 1/ 10 , 600 Page 10 of 11 QBDS56ZXX 0.56” Dual Digit Display


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PDF QBDS56ZXX
2008 - IRHLA770Z4

Abstract: IRHLA7930Z4 IRHLA7970Z4 2n7630 2N763 97306 quad p-CHANNEL
Text: -0.56 -0.35 -2.24 0.6 0.005 ± 10 26 -0.56 0.06 -5.79 -55 to 150 A W W/°C V mJ A mJ , ) Static Drain-to-Source On-State - Resistance VGS(th) Gate Threshold Voltage - 1.0 - VGS(th)/TJ , - 1.0 - 10 µA - - - - - - - - - 20 - - - - - - - - - - - , Conditions Min -60 - 1.0 - - - Diode Forward Voltage nA 1.25 VGS = -4.5V, ID = -0.35A - - -2.0 -100 100 - 1.0 - Drain-to-Source Breakdown Voltage Gate Threshold


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PDF PD-97306 2N7630M2 14-LEAD IRHLA7970Z4 IRHLA7970Z4 IRHLA7930Z4 MlL-STD-750, IRHLA770Z4 IRHLA7930Z4 2n7630 2N763 97306 quad p-CHANNEL
MGF0952P

Abstract: 42AA
Text: 0.56 10 9 - 0.7 - Vd=10V,IDQ=0.7A Freq.=2.6GHz Tc=25deg.C Freq.=2.6GHz 0.56 - Tc=25deg.C Freq.=2.6GHz IDQ 0.7 ACLR 0.56 10 9 IMD VD CW IDQ ACLR VD Tc=25deg.C Freq.=2.6GHz Tc -20 +25 +80 10 9 - Results Page2-3 shows the RF , 15 1.0 10 5 1.4 IDQ=0.7A(Po) IDQ=0.56A(Po) IDQ=0.7A(Id(RF) IDQ=0.56A(Id(RF) 20 1.2 15 20 25 30 0.8 5 0.6 0.4 10 10 0.6 5 1.0 0.8 0 15


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PDF MGF0952P MGF0952P 25deg 61GHz -10MHz) 10MHz) 42AA
2012 - 7 SEGMENT SINGLE DIGIT

Abstract: No abstract text available
Text: 4 2 1 10 5 9 7.4 BL-S28D-12 3,8 6 7 4 2 10 1 5 9 7.4 7.37 BL-S28X-12 Series BL-S28A-12 3,8 7 6 4 2 1 10 9 5 BL-S28B-12 3,8 7 6 4 2 1 10 9 5 7.37 For more, please visit http , BL-S39X-13 Series BL-S39A-11EG 8 10 9 3 5 7 4 2 6 1 BL-S39B-11EG 8 3 BL-S39X-13 10 9 7 5 4 2 1 6 BL-S39A-13 BL-S39B-13 For more, please visit


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PDF BL-S28A/B-11 BL-S28C/D-11 BL-S30A/B-11 BL-S30C/D-11, BL-S30E/F-11 BL-S30G/H-11, BL-S30I/J-11 BL-S30A/B-12 BL-S30A/B-13, BL-S30A/B-14 7 SEGMENT SINGLE DIGIT
2013 - SSI2007

Abstract: MosFET
Text: =0.5A, VGEN=4.5V, RL= 10 , RG=6 . - - P-Ch: VDS= -10V, VGS= -4.5V, ID= -0.6A - - nC - nS P-Ch: VDD= -10V, I D= -0.5A, VGEN= -4.5V, RL= 10 , RG=6 . Any changes of specification


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PDF SSI2007 OT-563 SSI2007 17-Dec-2013 MosFET
MGF0952P

Abstract: No abstract text available
Text: 0.56 10 9 - ACLR - Vd=10V,IDQ=0.7A Freq.=2.35GHz Tc=25deg.C Freq.=2.35GHz 0.56 - Tc=25deg.C Freq.=2.35GHz IDQ 0.7 ACLR 0.56 10 9 IMD VD CW IDQ 0.7 VD Tc=25deg.C Freq.=2.35GHz Tc -20 +25 +80 10 9 - Results Page2-3 shows the RF , 15 1.0 10 5 1.4 IDQ=0.7A(Po) IDQ=0.56A(Po) IDQ=0.7A(Id(RF) IDQ=0.56A(Id(RF) 20 1.2 15 20 25 30 0.8 5 0.6 0.4 10 10 0.6 5 1.0 0.8 0 15


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PDF MGF0952P MGF0952P 35GHz 25deg
42AA

Abstract: MGF0952P
Text: 10 Tc=25deg.C - 9 Freq.=1.9GHz IDQ IMD 0.7 0.56 - 10 9 ACLR IDQ ACLR VD CW Tc=25deg.C 10 9 VD Tc - Tc=25deg.C - Freq.=1.9GHz Results , 25 1.2 25 1.2 20 0.8 20 0.8 15 0.4 15 0.4 5 10 15 20 25 30 2.4 IDQ=0.7A(Po) IDQ=0.56A(Po) IDQ=0.7A(Id(RF) IDQ=0.56A(Id(RF) 5 10 15 , =9V(Id(RF) 2.0 25 20 Pin=14dBm Pin=19dBm Pin=24dBm 15 10 1.80 1.85 1.90 Freq.(GHz


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PDF MGF0952P 95GHz MGF0952P 25deg -900KHz) 900KHz) -600KHz) 42AA
42AA

Abstract: MGF0952P mgf09
Text: 0.56 10 9 - ACLR - Vd=10V,IDQ=0.7A Freq.=2.6GHz Tc=25deg.C Freq.=2.6GHz 0.56 - Tc=25deg.C Freq.=2.6GHz IDQ 0.7 ACLR 0.56 10 9 IMD VD CW IDQ 0.7 VD Tc=25deg.C Freq.=2.6GHz Tc -20 +25 +80 10 9 - Results Page2-3 shows the RF , 15 1.0 10 5 1.4 IDQ=0.7A(Po) IDQ=0.56A(Po) IDQ=0.7A(Id(RF) IDQ=0.56A(Id(RF) 20 1.2 15 20 25 30 0.8 5 0.6 0.4 10 10 0.6 5 1.0 0.8 0 15


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PDF MGF0952P MGF0952P 25deg 1000pF 330uF 42AA mgf09
c id

Abstract: 42AA MGF0952P
Text: 0.56 10 9 - 0.7 - Vd=10V,IDQ=0.7A Freq.=2.35GHz Tc=25deg.C Freq.=2.35GHz 0.56 - Tc=25deg.C Freq.=2.35GHz IDQ 0.7 ACLR 0.56 10 9 IMD VD CW IDQ ACLR VD Tc=25deg.C Freq.=2.35GHz Tc -20 +25 +80 10 9 - Results Page2-3 shows the , ) 25 20 1.2 15 1.0 10 5 1.4 IDQ=0.7A(Po) IDQ=0.56A(Po) IDQ=0.7A(Id(RF) IDQ=0.56A(Id(RF) 20 1.2 15 20 25 30 0.8 5 0.6 0.4 10 10 0.6 5 1.0


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PDF MGF0952P MGF0952P 35GHz 25deg c id 42AA
42AA

Abstract: MGF0952P
Text: 0.56 10 9 - 0.7 - Vd=10V,IDQ=0.7A Freq.=2.14GHz Tc=25deg.C Freq.=2.14GHz 0.56 - Tc=25deg.C Freq.=2.14GHz IDQ 0.7 ACLR 0.56 10 9 IMD VD CW IDQ ACLR VD Tc=25deg.C Freq.=2.14GHz Tc -20 +25 +80 10 9 - Results Page2-3 shows the , ) Tc=80deg.C(Id(RF) Tc=25deg.C(Id(RF) 1.4 Tc=-20deg.C(Id(RF) 30 20 1.2 15 1.0 10 , 25 30 1.0 10 0.8 5 0.6 0.4 10 15 0.6 5 1.2 0.8 0 20 0


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PDF MGF0952P 17GHz MGF0952P 14GHz 25deg 42AA
42AA

Abstract: MGF0952P
Text: 10 Tc=25deg.C - 9 IMD Freq.=1.9GHz IDQ 0.7 0.56 - 10 9 ACLR IDQ 0.7 VD CW Tc=25deg.C 10 9 VD Tc - Tc=25deg.C - Freq.=1.9GHz Results Page2 , 1.2 20 0.8 20 0.8 15 0.4 15 0.4 5 10 15 20 25 30 2.4 IDQ=0.7A(Po) IDQ=0.56A(Po) IDQ=0.7A(Id(RF) IDQ=0.56A(Id(RF) 5 10 15 20 25 Id(RF , Pin=14dBm Pin=19dBm Pin=24dBm 15 10 1.80 1.85 1.90 Freq.(GHz) 1.95 2.00 30


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PDF MGF0952P 95GHz MGF0952P 25deg -900KHz) 900KHz) -600KHz) 42AA
2008 - 2n7633

Abstract: IRF N-Channel Power MOSFETs IRHLA7630Z4 IRHLA7670Z4 2N763
Text: ± 10 16 Á 0.8 0.06 10.2 Â Units -0.56 -0.35 -2.24 0.6 W 0.005 W/°C ± 10 26 ² , = 0.5A 1.0 - 0.23 - - - -4.7 - - - 2.0 - - 1.0 10 V mV/°C S , VGS(th) Gate Threshold Voltage - 1.0 - VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward , (off) tf LS + LD Typ Max Units -2.0 V - mV/°C - S - 1.0 - 10 µA - - - - - , Drain-to-Source On-state Resistance (14-Lead Flat Pack) Diode Forward Voltage Max 60 1.0 - - -


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PDF PD-97251 2N7633M2 IRHLA7670Z4 14-LEAD IRHLA7630Z4 166mH, -161A/ 2n7633 IRF N-Channel Power MOSFETs IRHLA7630Z4 IRHLA7670Z4 2N763
Not Available

Abstract: No abstract text available
Text: 700 565 585 630 400 950 950 950 10 10 10 10 3.0 3.0 3.0 3.0 20 20 20 20 , 10 10 10 10 3.0 3.0 3.0 3.0 20 20 20 20 0.56" 0.56" 0.56” 0.56" Red Green Yellow Orange 700 565 585 630 400 950 950 950 10 10 10 10 3.0 3.0 3.0 3.0 20 , 950 950 950 10 10 10 10 3.0 3.0 3.0 3.0 20 20 20 20 0.56" 0.56" 0.56" 0.56” Red Green Yellow Orange 700 565 585 630 400 950 950 950 10 10 10 10 3.0 3.0


OCR Scan
PDF MS356A MG356A MY356A M0356A MS356C MG356C MY356C M0356C MS456A MG456A
d2023

Abstract: D2025 D2029 D2030 d2024 d2026 D2027 d2025 circuit d2025 datasheet 12v 3va transformer
Text: DAGNALL ELECTRONICS LIMITED Shuttleworth Road, Elms Industrial Estate, Bedford. MK41 0EP UK TEL +44(0)1234 330077 FAX +44(0)1234 330088 E-mail sales@dagnall-electronics.com Iss 1 25/ 10 /02 · 1 of , sales@dagnall-electronics.com Iss 1 25/ 10 /02 · 2 of 4 Part numbers Primary Secondary D2023 D2024 D2025 D2026 , )1234 330088 E-mail sales@dagnall-electronics.com Issue 1. 25/ 10 /02 · 3 of 4 PRODUCT DATASHEET , / 10 /02 · 4 of 4 PRODUCT DATASHEET 3.3VA PCB MOUNTED ENCAPSULATED TRANSFORMER Connection Diagrams


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PDF EN60950 EN60742 EN61558 UL506 cUL506 UL94-V0 d2023 D2025 D2029 D2030 d2024 d2026 D2027 d2025 circuit d2025 datasheet 12v 3va transformer
2007 - 1/BT+7311

Abstract: No abstract text available
Text: No file text available


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PDF
Not Available

Abstract: No abstract text available
Text: 10 to 3000 MHz L(+20 dBm), M(+28 dBm), U(+30 dBm) Supply V +6V max , . Max. 1.3 1.9 Outline Drawing fU 3000 fL 10 ZSDR-230+ L= low range(fL to 10 fL) ฀ à , M=mid range( 10 fL to fU/2) lw=low฀band฀(fL to fU/2) Min. 40 Frequency฀Band M Typ. Min , ¸€ 2.19฀ 2.12฀ 2.02฀ ZSDR-230+ INSERTION LOSS at RF level of 10 dBm 100 — x Ï , ¸€ 0.89 1.82฀ 0.82฀ 2.00฀ 0.49฀ 0.30฀ 0.56฀ 0.86฀ at RF level of 10 dBm 0.39à


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PDF ZSDR-230+ CCC127
TOA 2050

Abstract: No abstract text available
Text: . 10 GROUND฀฀฀ The +Suffix identifies RoHS Compliance. See our web site for RoHS , €” - 10 dBm less than - 10 dBm input power — 0.7 1.3 dB VSWR Suggested Layout, Tolerance to be within ±.002 less than 0.1 dB compression Insertion Loss less than - 10 dBm input , ˆ† Output/ ∆ 1dB Input 5 to 10 — 0.1 — 10 to 20 — 0.05 — — â , -343 dB/dB K .060 1.52 wt. grams 1.0 Typical Performance Data Freq. (MHz) VSWR (:1) in


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PDF RLM-23+ CK1246-1 TOA 2050
Not Available

Abstract: No abstract text available
Text: Plug-In Switch TOSW-230+ 50W SPDT Pin Diode, Reflective TTL Driver, 10 to 3000 MHz , ¸€ satellite฀communication 8 5 11 3 1 2,4,6,7,9, 10 ,12 2,4,6,7,9, 10 ,12 The +Suf x has been added in order to , ¸€ ฀ ฀ Outline Drawing fU 3000 fL 10 ฀ ฀ INSERTION LOSS (dB) Low฀band lw , 11.80 10.49 9.46 11.35 at RF level of 10 dBm TOSW-230+ INSERTION LOSS TOSW-230+ ISOLATION 100 1.6 80 ISOLATION (dB) INSERTION LOSS (dB) 2.0 at RF level of 10 dBm 1.2 0.8


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PDF OSW-230+ 2002/95/EC)
Not Available

Abstract: No abstract text available
Text: Weight Units 0.89 0.56 3.56 1.0 0.01 ± 10 20 0.89 0.1 4.7 -55 to 150 A W W/°C V , www.irf.com 1 10 /18/ 10 IRHLUC770Z4, 2N7617UC Pre-Irradiation Electrical Characteristics For , „¦ VGS = 4.5V, ID = 0.56A 1.0 — 0.25 — — — -4.5 — — — 2.0 — — 1.0 10 V mV/°C S VDS = VGS, ID = 250µA — — — — — — — — — â , (on) VSD 60 1.0 — — — Diode Forward Voltage µA VGS = 0V, ID = 250µA VGS =


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PDF PD-97573 2N7617UC IRHLUC770Z4 IRHLUC770Z4 IRHLUC730Z4 MIL-PRF-19500/255L
Supplyframe Tracking Pixel