0565 IC Search Results

THC63LVDM83d

Abstract: NL12876AC18-03 12876AC 8 super LCD tv circuit diagram DOD-MDA-0537 NL12876 FCC16202AB pwm 0565
Contextual Info: TFT COLOR LCD MODULE NL 12876AC 18-03 27cm 10.6 Type WXGA LVDS inter face (1por t) PRELIMINARY DATA SHEET DOD-MDA-0565 (5th edition) This PRELIMINARY DATA SHEET is updated document from DOD-MDA-0537. All informa tion is subject to change without notice.

ICE3B2065 application

Abstract: ICE3B3065P ICE3B1565 IC ICE3B2565 ICE3A2065P INFINEON PG-TO220-6-47 ICE3A ICE3A0565Z ice3b0365 ICE3B2065 application power supply
Contextual Info: Datasheet, Version 2.0, 24 Aug 2005 C o o l S E T -F3 ICE3A B 0365/0565/1065/1565 ICE3A(B)2065/2565 ICE3A0565Z/2065Z ICE3A(B)2065I/3065I/3565I ICE3A(B)5065I/5565I ICE3A(B)2065P/3065P/3565P ICE3A(B)5065P/5565P Off-Line SMPS Current Mode Controller with integrated 650V

varistor BS415

Abstract: BS415 varistor A 70083 E97754 Varistor swc up/varistor BS415 a/varistor BS415 IC/varistor BS415 70083 384-14
Contextual Info: DISC CERAMIC CAPACITORS Safety Standard Recognized Ceramic Capacitor SC Type : Rating Voltage AC 125/250/400V, Testing Voltage AC 2500V SD Type : Rating Voltage AC 125/250/400V, Testing Voltage AC 4000V UL 1414 BS 415 VDE 0 5 6 0-2 VDE 0565-1 CSA C22.2 No.1

B85111-A-B33

Abstract: B85111-A-B14 B85111-A-B16
Contextual Info: B85111-A-B Feed-Through Capacitors Rated voltage Y capacitors with external thread M 12 x 0,75 Rated current 440 V 250 V~ 16 A Coaxial feed-through capacitors as per V D E 0565-1. Clearance and creepage distance: > 4 mm. Dim ensions in mm Type /l - 3 /2 - 1 .5

Contextual Info: • 7fl21b24 00023^3 fl4T ■ H-C5M-C5 A COMPANY S E R IE S F t 7 1 0 -x x x -1 0 0 0 /-1 0 3 0 /-1 9 0 0 R adio In te rfe re n c e S up p resso rs OF Roederstein Class Y, Across-The-Line AC Capacitors

9435 power

Abstract: M38198ECFP
Contextual Info: M38198ECFP - 1 Rd [ohm] 680 FCR8.0MC5 Ta* 20 Cdog] 0— 7 5 3 1 -1 7 5 3 1 -1 .5 .3 .1 -.1 -.3 -.5 400 300 200 100 60 55 50 45 40 a . VIH/V1L c . Fosc m 0 T y p ic a l CV3 iXl m z 2 ; - _»_ d. T rise _ L CuS] _1_ _1_ _ 1_ . - -

Contextual Info: F-204 CLE-125-01-G -D V C LE -108-01-G -D V CLE-136-01-G -D V A ,80mm .0315" SOCKET S P E C IF IC A T IO N S CLE SERIES Mates w ith FTE, AW For complete specifications see www.samtec.com?CLE Insulator Material: Black Liquid Crystal Polymer Contact Material:

MPC 1298 V

Abstract: schematic diagram online UPS 12-MMB-050-5-C schematic diagram online single phase UPS 60-BHP-XXX-X-4 MIL-STD-1399 60-BHS-XXX-X-4 12-PMB-200-DC-E 62-pml-015-3-11 SAE-J551
Contextual Info: EMI Power Filters CERTIFIED Signal & Power Integrity Group EMI Power Filters Spectrum Control EMI filtered power products prevent unwanted interference from entering your system, as well as eliminate emissions that can contaminate the AC power grid. Our standard and custom products

0.1 uf Ceramic disc Capacitors 104

Abstract: iec 384-14-2 IEC 384 14/2 103 Ceramic Disc Capacitors 104 DISC capacitor capacitor 104 PF disc function of 0.1 uf Ceramic disc Capacitors 104 104 Ceramic Disc Capacitors .01 uf disc capacitor en 132 400
Contextual Info: RFI CERAMIC DISC CAPACITORS Suppression Capacitors Class X1 AC 275 V W1X Design: Disc capacitor with epoxy coating Rated Voltage UR: AC 275 V; 50/60 Hz Test Voltage UT: DC 4000 V / 2 s X1 Random Sampling Test: DC 250 V / 5 s Voltage Proof of Coating: AC 2000 V / 50 Hz, 60 s

Contextual Info: am tec FACTSHEET F-199 CLE CLE CLE 0,80 m m .0315" SOCKET SPECIFICATIONS Materials: In su la to r Material: Black Liquid Crystal Polymer C ontact Material: Beryllium Copper C urrent Rating: .75A @ 80°C ambient O perating Temp Range: -65°C to +125°C P lating:

UPA79C

Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ

2SC3624

Abstract: 99AK VEBO-15V 2SC3624A TC-5894
Contextual Info: NEC i Ü í f / \ f 7 Silicon T ra n sisto rs i 2SC3624,3624A NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Switching fl-ffSH/PACKAGE DIMENSIONS /FEATURES U nit : mm 2.8 + 0.2 O iHjhpk "T "!-o hFE = 1 0 0 0 — 3200 1.5 @ V Cp; = 5 . 0 V , Ic = 1 .0 m A

TDA16846 equivalent

Abstract: ICE1PS02 ICE1QS01 equivalent tda16846 TDA4605 ICE1QS01 TDA4863 TDA4605-3 ICE1PS01 tda16888
Contextual Info: SE#7 1 .qxd 3/7/2006 5:06 PM Page 118 Èñòî÷íèêè ïèòàíèÿ Ñèëîâàÿ Ýëåêòðîíèêà, ¹ 1’2006 ÃËÍÓÒıÂÏ˚ Infineon ‰Îˇ Íβ˜Â‚˚ı ËÒÚÓ˜ÌËÍÓ‚ ÔËÚ‡Ìˡ  ñòàòüå ðàññìîòðåíî ìíîãî÷èñëåííîå ñåìåéñòâî âûïóñêàåìûõ âåäóùåé

2SA988

Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
Contextual Info: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )

capacitor 104 PF disc

Abstract: iec 384-14-2 vishay cf0k EN 132 400 IEC 384-14-2
Contextual Info: VISHAY RFI CERAMIC DISC CAPACITORS DRALORIC 7 Suppression Capacitors Class X1 AC 275 V W1X Design: Disc capacitor with epoxy coating Rated Voltage S max. U r: AC 275 V; 50/60 Hz Test Voltage U t: DC 4000 V / 2 s X1 Random Sampling Test: DC 250 V / 5 s Voltage Proof of Coating:

Contextual Info: NEC ? t Compound Transistor / \ T 7 *$ BN1F4N it o ^ M T x f f iiÆ è ^ I/ lL T v ^ l'o Ri = 22 k£2, R2= 47 kQ ¥ o BA1F4N t 3 > 7° U / > 9 >J T 'ë É ( T a = 25 °C ) II H& s 3 1/^^- • < - x F IIE n i/ 9 9 X $ '7 9 -60 V V CEO -50 V V ebo -10 V IC(DC)

nec 6101

Abstract: F530 T108 ga1a TC-6253 LA 5511
Contextual Info: 4# J. I /V l?v I Ih .T A NEC Iïf/\f7 C o m p o u n d T ran sis to r G N1A4Z ! mm « o ^ ^ T x f M ^ ^ l L T ^ i t o Ri = 10 kQ) m M M ± ^ ( T a = 25 °C) n a 9 v 9 "/ • * ^ 9 M ^ v B& s 9 £ -6 0 V ? F hT I ± V CEO -5 0 V V - V SÈ) 9 {£ 1? Ic(p u 1s e )

Densei-Lambda

Abstract: lambda lk EN133200 MB1206 MB1210 MB1216 MB1220 MB1236 VDE0565
Contextual Info: UMBBtA DENSEI-LAMBDA M B - series • Features 1 Wide band: High attenuation. Band wide: 150kHz ~ 30MHz, 2 stage filter (2) Block terminal with cover type Simple wire connection, high safety by cover (3) Compact, low profile package Low profile metal case, 10A type: 26mm

aif4m

Abstract: marking h06 5946A aif4m k JT MARKING 5P J TRANSISTOR MARKING
Contextual Info: 7 s— S • — h- Com pound Transistor FIMI F 4 M > 1-^ t£ÈfcF*9Ü c P N P x n ÿHBS # e : mm a 7 o ^ M x f â i / t £ | * | j l L ( R x = 22 k û , t > 1 ~a '£ 2 .8 ± 0.2 1.5 R 2 = 22 kQ) o.65-8:i5 iC J. o FA1F4M t =? > 7° 'J / > U X " i t ffl T" £ i f c

Contextual Info: F -199-1 sam te c C L E -1 2 5 -0 1 -G -D V C L E -1 0 8 -0 1 -G -D V C LE -1 3 6 -0 1 -G -D V 0,80 a tu Materials: t o In s u la to r M a te ria l: B la c k L q u id C ry s ta l P o ly m e r C o n ta c t M a te ria l: B e ry lliu m C o p p e r C u rre n : R a tin g :

222 VDE 565-1

Abstract: 1151B cera-mite z5u 565-1 capacitor Z5U 472 565-1 Y
Contextual Info: Across-The-Line • MallorY Disc Ceramic Capacitors GENERAL SPECIFICATIONS CERA-MITE Y Type Filter ■ 250 VAC/4000 VDC ■ Across-The-Line Filter ■ EMI / RFI Filter ■ Case Breakdown: 2500V AC Insulation Resistance: 100G igaohm s minimum. Environmental:

TC-5845

Abstract: 2SC3615 PA33 YST200
Contextual Info: - — • 5 / — s h Silicon T ra n sisto r 2SC3615 T&ìs'J n v Y^>'>7.^ NPN x i& m m n m m 4# K W m a O i H jh p E W Ì : mm) ~ C ~ Î~ o = hFE 8 0 0 — 3200 O fâ V c E s a t) @ V ce = V, Ic= 5 .0 100 m A ~ Ü "Ÿ o V c E ( s a t ) = 0 . 11 o i h j V ’e b o ' T ' Ì ’ o

lO552

Abstract: 1T108 T460 0766125 2AV9
Contextual Info: NEC I ï f / \ f C o m p o u n d T ra n sisto r 7 CE1A3Q î& Î/ t r t S U M CE1A3Q ' i t — K, 1 L t n u ? ? 3 w ÿ 9 • ^ $ -y 9 F^ ic y > # F '7 ^ i £ I T * e n m m t - Ÿ ' Z f t M L f z , • -<— H igh h FE Î Ê t / i l ^ Ü F 7 > y ' X ^ T",

Transistor BC 227

Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 fs3t LG 631 IC PA33 T108 transistor bd 346 la 5531 mB7k
Contextual Info: ± I I ÍK NEC iíf/VfZ CompoundTransistor A A 1A 4Z r 3&iÆ f*31NPNX 'J□>• ! mm R i = 10 k ß ) o A N 1 A 4 Z t ? > Vo 'J / > ? 'J lê ^ -f t ^ Æ ¿ 1 ”c f ê ( T a = 2 5 °C) Ali H& ^ VcBO V CEO -y 9 • V ebo íiít) Ic( DC) ^2 v 9 9 t t ( ^ u )