NCE3050I
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NCEPOWER
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NCE3050I N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 11mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications. |
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AK6050I
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AK Semiconductor
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AK6050I N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 50A continuous drain current, RDS(ON) less than 20mΩ at VGS=10V, suitable for power switching and high frequency circuits. |
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AK3050I
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK3050I with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 11mΩ at VGS=10V, low gate charge, and high ESD capability in TO-251 package. |
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NCE6050IA
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NCEPOWER
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60V, 50A NCE6050IA N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 14mΩ at VGS=10V, high density cell design, and excellent thermal performance in TO-251 package. |
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AK6050IA
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AK Semiconductor
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AK6050IA N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 50A continuous drain current, and 20mΩ maximum RDS(ON) at 10V VGS, featuring low gate charge and high ESD capability. |
Original |
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NCE3050I
