K1050G
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Bidirectional silicon switch with high power handling, available in KxxxxG series, featuring breakover voltages from 80V to 270V, on-state current up to 1A, and surge current tolerance of 16.7A peak, suitable for high-voltage ignition and protection applications. |
Original |
PDF
|
|
|
|
S8050-G(RANGE:120-200)
|
|
JCET Group
|
NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain up to 400, and transition frequency of 150 MHz.NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain from 120 to 400, and transition frequency of 150 MHz. |
Original |
PDF
|
|
|
|
SS8050-G(RANGE:200-350)
|
|
JCET Group
|
NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
|
K1050G
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon bilateral voltage triggered device in DO-15 package, with peak off-state voltage from 70 to 220 V, on-state RMS current 1 A, and non-repetitive surge current up to 16.7 A. |
Original |
PDF
|
|
|
|
S8050-G(RANGE:200-350)
|
|
JCET Group
|
NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain up to 400, and transition frequency of 150 MHz. |
Original |
PDF
|
|
|
|
SS8050-G(RANGE:120-200)
|
|
JCET Group
|
NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
|
CA-IS3050G
|
|
ChipAnalog
|
1-Trnsvr, PDSO8, SOIC-8 |
Original |
PDF
|
|
|
K1050G
