04P10P Search Results
04P10P Price and Stock
Infineon Technologies AG SPD04P10PLGBTMA1MOSFET P-CH 100V 4.2A TO252-3 |
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SPD04P10PLGBTMA1 | Digi-Reel | 1,757 | 1 |
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SPD04P10PLGBTMA1 | Reel | 10 Weeks | 2,500 |
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SPD04P10PLGBTMA1 | Bulk | 8,280 | 1 |
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SPD04P10PLGBTMA1 | 3,814 | 1 |
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SPD04P10PLGBTMA1 | 1 |
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SPD04P10PLGBTMA1 | Reel | 2,500 | 2,500 |
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SPD04P10PLGBTMA1 | Cut Tape | 2,874 | 0 Weeks, 1 Days | 5 |
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SPD04P10PLGBTMA1 | 11 Weeks | 2,500 |
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Infineon Technologies AG SPD04P10PGBTMA1MOSFET P-CH 100V 4A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPD04P10PGBTMA1 | Reel | 2,500 |
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SPD04P10PGBTMA1 | Reel | 22 Weeks | 2,500 |
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SPD04P10PGBTMA1 | 2,815 | 1 |
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SPD04P10PGBTMA1 | 1 |
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SPD04P10PGBTMA1 | Cut Tape | 2,500 | 0 Weeks, 1 Days | 5 |
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Infineon Technologies AG SPD04P10PL GMOSFETs P-Ch -100V 4.2A DPAK-2 |
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SPD04P10PL G | 6,080 |
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Infineon Technologies AG SPD04P10PGBTMA1 (SIPMOS)Mosfet, P-Ch, 100V, 4A, To-252 Rohs Compliant: Yes |Infineon SPD04P10PGBTMA1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPD04P10PGBTMA1 (SIPMOS) | Cut Tape | 1 |
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04P10P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 |
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SPD04P10P PG-TO252-3 04P10P | |
SPD04P10PLContextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL 25angerous | |
MJ 14 x 1,5 - 4Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P JESD22-C101-HBM MJ 14 x 1,5 - 4 | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL JESD22-C101-HBM | |
04P10PL
Abstract: 04p10
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SPD04P10PL PG-TO-252 PG-TO252-3-1 04P10PL JESD22-C101-HBM 04P10PL 04p10 | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features -100 V R DS on ,max 1 Ω ID -4 A V DS • P-Channel • Enhancement mode • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P JESD22-A114-HBM | |
DIODE D28Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P 57erous DIODE D28 | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P JESD22-C101-HBM | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P JESD22-C101-HBM | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL JESD22-A114-HBM |