04N60S5 Search Results

04N60S5

Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60
Contextual Info: 04N60S5 04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

SPN04N60S5

Abstract: transistor smd marking ds sot-223 04n60s5 VPS05163
Contextual Info: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances

720 TRANSISTOR smd sot-223

Abstract: SPN04N60S5
Contextual Info: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances

Contextual Info: 04N60S5 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

04n60s5

Contextual Info: 04N60S5 04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances

04n60s5

Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
Contextual Info: SIEMENS 04N60S5 04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s

04N60S5

Abstract: SPN04N60S5 04N60S 04N60 GPS05560 VPS05163 Q67040-S4211
Contextual Info: 04N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 • Ultra low gate charge 3 G,1 • Extreme dv/dt rated 1 • Optimized capacitances V DS ID 04N60S5 600 V 0.8 A

SPN04N60S5

Abstract: SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223
Contextual Info: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

04N60S5

Abstract: SPN04N60S5 720 TRANSISTOR smd sot-223 VPS05163
Contextual Info: 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances

04n60s5

Abstract: SPB04N60S5 SPP04N60S5
Contextual Info: 04N60S5 04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated

04n60s5

Abstract: SPN04N60S5 GPS05560 VPS05163
Contextual Info: 04N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Worldwide best RDS on in SOT 223 Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Extreme dv/dt rated RDS(on)

04n60s5

Abstract: 04N60 TRANSISTOR SMD MARKING CODE WS Q67040-S4202 SPU04N60S5 SPD04N60S5
Contextual Info: 04N60S5 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances

Contextual Info: SIEMENS 04N60S5 04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

04n60s5

Abstract: SPB04N60S5 SPP04N60S5 04N60S 04n60
Contextual Info: 04N60S5 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances

Contextual Info: 04N60S5 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances

Contextual Info: 04N60S5 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances

04n60s5

Abstract: SPP04N60S5
Contextual Info: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances

04N60S5

Abstract: P-TO252 SPD04N60S5 SPU04N60S5
Contextual Info: 04N60S5 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances

04n60s5

Contextual Info: 04N60S5 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

SPB04N60S5

Abstract: 04N60S5 SPP04N60S5 04N60
Contextual Info: 04N60S5 04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

Contextual Info: 04N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in SOT 223 · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity Type 4 3 G,1

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06