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    048N12N Search Results

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    048N12N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPP048N12N3GXKSA1

    MOSFET N-CH 120V 100A TO220-3
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    DigiKey IPP048N12N3GXKSA1 Tube 365 1
    • 1 $4.78
    • 10 $4.78
    • 100 $2.26
    • 1000 $1.79
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    Avnet Americas IPP048N12N3GXKSA1 Tube 16 Weeks 500
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    • 1000 $1.52
    • 10000 $1.45
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    Newark IPP048N12N3GXKSA1 Bulk 65 1
    • 1 $4.43
    • 10 $2.48
    • 100 $2.26
    • 1000 $2.23
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    Bristol Electronics IPP048N12N3GXKSA1 1,162
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    Rochester Electronics IPP048N12N3GXKSA1 24 1
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    • 1000 $1.61
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    TME IPP048N12N3GXKSA1 172 1
    • 1 $4.17
    • 10 $3.66
    • 100 $2.12
    • 1000 $2.06
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    Chip One Stop IPP048N12N3GXKSA1 Tube 1,000 0 Weeks, 1 Days 1
    • 1 $1.80
    • 10 $1.79
    • 100 $1.76
    • 1000 $1.61
    • 10000 $1.61
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    Chip Stock IPP048N12N3GXKSA1 3,224
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    EBV Elektronik IPP048N12N3GXKSA1 500 17 Weeks 500
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    New Advantage Corporation IPP048N12N3GXKSA1 500 1
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    Win Source Electronics IPP048N12N3GXKSA1 1,724
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    • 100 $2.43
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    Infineon Technologies AG IPP048N12N3 G

    MOSFETs N-Ch 120V 100A TO220-3 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPP048N12N3 G 341
    • 1 $4.15
    • 10 $2.37
    • 100 $2.19
    • 1000 $1.79
    • 10000 $1.79
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    Infineon Technologies AG IPP048N12N3G

    MOSFET N-CH 120V 100A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics IPP048N12N3G 1,724
    • 1 -
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    • 100 $3.48
    • 1000 $3.48
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    048N12N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    048N12N

    Abstract: 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 IPP048N12N3 G
    Contextual Info: 048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP048N12N3 PG-TO220-3 048N12N3 048N12N 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 G PDF

    048N12N

    Abstract: IEC61249-2-21 JESD22 PG-TO220-3 IPP048N12N3
    Contextual Info: 048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP048N12N3 PG-TO220-3 IEC61249-2-21 048N12N 048N12N IEC61249-2-21 JESD22 PG-TO220-3 PDF