0470B Search Results

Contextual Info: InGaN-High Brightness Lumineszenzdiode 470 nm, High Power InGaN High Brightness Light Emitting Diode (470 nm, High Power) F 0470B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 6 mW @ 20 mA (im 5mm Radial Gehäuse)

04P376B

Contextual Info: BZW04 SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.8 to 376 Volts 400 Watt Peak Power / 1.0 Watt Steady State REVERSE BREAKDOWN BREAKDOWN TEST STANDVOLTAGE VOLTAGE PART NUMBER CURRENT OFF VBR V VBR(V) IT (mA) VOLTAGE

04P14

Abstract: 04P15 diode bzw 90 04P19 BZW 04-40B B 04P17 04P11 BZW 20 04P19B 04P64B
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com BZW04 SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

Contextual Info: TOSHIBA TMP96C141AF CMOS 16-bit MICROCONTROLLERS TMP96C141AF 1. OUTLINE AND DEVICE CHARACTERISTICS TM P96C141AF is high-speed advanced 16-bit m icrocontrollers developed for controlling medium to large-scale equipm ent. TMP96C141AF is housed in an 80-pin flat package.

Contextual Info: BZW04 SERIES DATA SHEET GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.8 to 376 Volts 400 Watt Peak Pulse Power / 1.0 Watt Steady State FEATURE — Plastic package. — Glass passivated chip junction in DO-41 Package — 400W peak pulse power capability on 10/1000µs wave-form.

3 bit magnitude comparator

Abstract: 3-bit magnitude comparator
Contextual Info: FPGA 24-Bit Magnitude Comparator with 50 ns Response Introduction The AT6000 Series field programmable gate array FPGA lets the designer implement a magnitude comparator that can compare two 24 bit binary integers in 50 ns. Description Figure 1 shows the structure of the

DIODE ZENER BZW 06

Abstract: BZW 04-40B B DIODE ZENER BZW 04 diode bzw 06 04-19B 0419B 0415B diode bzw 90 04-213B DIODE ZENER BZW bipolar
Contextual Info: BZW04-5V8 B / 376(B) SERIES Transient Voltage Suppressor Diodes Voltage Range 5.8 to 376 Volts 400 Watts Peak Power DO-41 Features a a a a a a a a a UL Recognized File # E-96005 Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Contextual Info: C ir% A v J v ^ Co'po'ltlcn^ SP8530 u ik a SIGNAL PROCESSIN G EXCELLENCE S2ADC - Simultaneous Sampling Analog to Digitai Converter • Simultaneous Sampling of 2 channels ■ 12 Bit Resolution ■ Single +5Volt Supply ■ Internal Reference ■ 0 to +2.5 Volt Input Range

Contextual Info: SG S-ÏHO M SO N mœmieraiMOSS BZW04-5V8/376 BZW04-5V8B/376B TRANSIL FEATURES • PEAK PULSE POWER: 400 W 10/IOOQus ■ STAND-OFF VOLTAGE RANGE: From 5.8V to 376 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ UL RECOGNIZED

04P376B

Contextual Info: LESHAN RADIO COMPANY, LTD. BZW04 SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-6.8 TO 440 Volts 400 watt Peak Power / 1.0 Watt Steady State 0.205 5.2 0.160(4.1) 1.0(25.4) MIN 1.0(25.4) MIN 0.034(0.86) DIA 0.028(0.71) FEATURES • Plastic package

26fbp06

Abstract: SKE350CA B80C2000 Fagor* fbi 3.7 B250C1500 1000 SKE400 FBU4K BAI 59 fagor B80C1500 26FBP04
Contextual Info: FAGOR ^ Numerical Index 1N4001 . . 1N4001F . . 1N4001GP . . 1N4002 . . 1N4002F . . 1N4002GP . .

BZW 04-40B B

Abstract: 04P13B 04 13B 0448B 04P102B 04P376B 04P376 136B diode bzw 27 04-7V8
Contextual Info: DB LECTRO Inc. BZW04 SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 400 Watts Peak 1.0 Watt Steady Stae BZW04 PART NUMBER UNI- POLAR BI-POLAR BZW 04P5V8 BZW 04-5V8 BZW 04P6V4 BZW 04-6V4 BZW 04P7V0 BZW 04-7V0 BZW 04P7V8

BZW04

Abstract: 04-213B 0419B 04-342B 04-5V8B 04P17 04P11B 0415B 0437B 0448B
Contextual Info: BZW04 SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.8 to 376 Volts 400 Watt Peak Power / 1.0 Watt Steady State REVERSE BREAKDOWN BREAKDOWN TEST STANDVOLTAGE VOLTAGE PART NUMBER CURRENT OFF VBR V VBR(V) IT (mA) VOLTAGE

DIP014-P-0300D

Abstract: B92 62 diode pa c12 100 12p P050P ip022 TSOP050-P
Contextual Info: 172 MOS Memories M H O 188 CCD Area Image Sensors (C □ □ ) 193 CCD Area/Linear Image Sensors (C □ □ ) 194 CCD Camera Modules/TFT LCD Devices (C D D ) 196 Bipolar ICs (B DD) 197 Discrete Semiconductors (D DD) 212 171 O u tlin e s MOS LSIs (L E O )