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CPSS100

Abstract: Interconnect Devices RSS-100-NT gss100 GSS-100 RSS100RP SS10 SS11 SS18 SS19
Contextual Info: Series SS & GSS BECU PLUNGERS PROBE SPECIFICATIONS 60° .077 1,96 90° .077 (1,96) 2 .077 (1,96) 3 .075 Radius .062 (1,57) 37° 60° .075 (1,91) 60° .075 (1,91) .045 (1,14) .045 (1,14) 90° .075 (1,91) .045 (1,14) SIZE 100 SS-100/GSS-100 PROBE Minimum Centers: .100 (2,54)

RSS-100-WW

Contextual Info: Series SS & GSS Probe Specifications BeCu Plunger Tips 37° 90° .075 Radius 37° 60° 90° .077 1.96 1 .077 (1.96) 2 .077 (1.96) 3 .062 (1.57) 4 .075 (1.91) 8 .045 (1.14) 10 .045 (1.14) .100 Centers 11 .075 (1.91) 18 .045 (1.14) 19 1 2 3 4 8 GSS-100 Probe

MOSFET D25

Contextual Info: VMM 15-045 VMM 15-05 Dual Power MOSFET Modules DSS D25 R DS on = 450/500 V = 20 A = 0.2 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T d = 25°C to 150°C VMM 15-045 VMM 15-05 450 500 V V v DGR T,J = 25°C to 150°C; FL. = 2 0 k i2 Cab VMM 15-045

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz* MS2830A-041: 9 kHz to 6 GHz* MS2830A-043: 9 kHz to 13.5 GHz* MS2830A-044: 9 kHz to 26.5 GHz MS2830A-045: 9 kHz to 43 GHz *: See MS2830A-040/041/043 catalog The MS2830A-044/045 Signal Analyzer includes a spectrum analyzer function for measuring up to 325 GHz using an external mixer based

transistor 4580

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD20N06HD HDTMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Dcvlce TMOS POWER FET 20 AMPERES 60 VOLTS RDS on = 0-045 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: IRFR3518 IRFU3518 D-Pak IRFR3518 Applications l High frequency DC-DC converters I-Pak IRFU3518 Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRFu024N

Abstract: AN-994 IRFR024N IRFR120 IRFZ24N IRFRU024N irfr 120 U024N
Contextual Info: PD - 9.1336 IRFR/U024N PRELIMINARY HEXFET Power MOSFET Surface Mount IRFR024N Straight Lead (IRFU024N) 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS(on) = 0.075Ω ID = 16A Description Fifth Generation HEXFETs from International Rectifier

irfr3518

Abstract: AN1001 EIA-541 IRFU3518
Contextual Info: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

Contextual Info: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRF520N

Abstract: U120 AN-994 IRFR120 IRFR120N IRFU120N
Contextual Info: PD - 9.1365 IRFR/U120N PRELIMINARY HEXFET Power MOSFET Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.21Ω ID = 9.1A Description Fifth Generation HEXFETs from International Rectifier

AN-994

Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105
Contextual Info: PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching RDS(on) = 0.045Ω ID = 25A➄ Description

Contextual Info: □ IXYS Advanced Technical Information High Voltage M O S FE T D25 Maximum Ratings Symbol Test C onditions V DSS Tj = 25°C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M£i 1000 V VGS v GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25°C 1.5 A

AN-994

Abstract: IRFR120 IRFR1205 IRFU120 IRFU1205 IRFR 320 IRFU 310
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY DATASHEET PD - 9.1318 IRFR/U1205 HEXFET Power MOSFET VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) 150°C Operating Temperature Fast Switching Fully Avalanche Rated

AN-994

Abstract: IRF530N IRFR120 IRFR3910 IRFU3910 irfr 120 001T
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1364 IRFR/U3910 PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance Surface Mount IRFR3910 Straight Lead (IRFU3910) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.11Ω

AN-994

Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105 U4105
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching

Contextual Info: IRLR/U2705 D-Pak TO-252AA l l l l l l l I-Pak TO-251AA Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Description The D-PAK is designed for surface mounting

AN-994

Abstract: IRF520N IRFR120 IRFR120N IRFU120N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1365 IRFR/U120N PRELIMINARY HEXFET Power MOSFET Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.21Ω ID = 9.1A Description

pcb layout for TO 252AA

Abstract: AN-994 IRFR024N IRFR120 IRFU024N IRFZ24N irfr 120
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1336 IRFR/U024N PRELIMINARY HEXFET Power MOSFET Surface Mount IRFR024N Straight Lead (IRFU024N) 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS(on) = 0.075Ω ID = 16A Description

IRFU N-Channel Power MOSFETs

Abstract: JEDEC TO-251AA U3910 AN-994 IRF530N IRFR120 IRFR3910 IRFU3910 "thermal via" PCB D-PAK
Contextual Info: PD - 9.1364 IRFR/U3910 PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance Surface Mount IRFR3910 Straight Lead (IRFU3910) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRLR/U2703 D-Pak TO-252AA l l l l l l l I-Pak TO-251AA Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated Description The D-PAK is designed for surface mounting

Contextual Info: PD- 91335D IRLR/U2703 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.045" G ID = 23A…

Contextual Info: PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description