03SEP2007 Search Results

63 ball Vfbga thermal resistance

Contextual Info: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached

JESD97

Abstract: STL100NHS3LL
Contextual Info: STL100NHS3LL N-channel 30V - 0.0032Ω - 22A - PowerFLAT 6x5 STripFET™ Power MOSFET plus monolithic Schottky Preliminary Data Features Type VDSS RDS(on) ID STL100NHS3LL 30V < 0.0042Ω 22A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

bluetooth Keyboard Mouse

Abstract: CAN4311 CAN4311* antenna yageo bluetooth antenna GS-BT2416C2 SO 42 P
Contextual Info: GS-BT2416C2.AT1 Bluetooth class 2 module with embedded SPP SW Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Bluetooth specification V.1.2 compliant Transmission rate up to 721 Kbps Output power class 2 0 dBm typical Working distance up to 10 meters

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

p22nf03l

Abstract: P22NF03 P22NF0 MOSFET MARKING ST
Contextual Info: STP22NF03L N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET II Power MOSFET Features Type VDSS RDS on ID STP22NF03L 30V <0.05Ω 22A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested

Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

Contextual Info: high performance low power computing Oak 4-20 4-20mA Current Sensor including galvanic Isolation and 24V power supply Datasheet The picture is slightly different from the original Oak 4-20 device Revision history Date Doc. Rev. Changes 21-Jun-2011 Rev. 1.5

P22NF03

Abstract: p22nf03l STP22NF03L JESD97 p22n
Contextual Info: STP22NF03L N-channel 30 V, 0.0038 Ω, 22 A, TO-220 STripFET II Power MOSFET Features Type VDSS RDS on max ID STP22NF03L 30 V < 0.05 Ω 22 A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested

K822

Abstract: JESD97 STK822
Contextual Info: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

bluetooth Keyboard Mouse

Abstract: CAN4311 CAN4311* antenna yageo bluetooth antenna GS-BT2416C2 antenna Yageo
Contextual Info: GS-BT2416C2.AT1 Bluetooth class 2 module with embedded SPP SW Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Bluetooth specification V.1.2 compliant Transmission rate up to 721 Kbps Output power class 2 0 dBm typical Working distance up to 10 meters

JESD97

Abstract: K800 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

bluetooth Keyboard Mouse

Abstract: yageo bluetooth antenna CAN4311 USB joystick HID CAN4311* antenna wireless keyboard bluetooth GS-BT2416C1 ANCV
Contextual Info: GS-BT2416C1.AT1 Bluetooth class 1 module with embedded SPP SW Features • Bluetooth® specification V.1.2 compliant ■ Transmission rate up to 721 Kbps ■ Output power class 1 20 dBm max ■ Working distance up to 100 meters ■ ACL and SCO links ■

ST2N

Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type RDS on VDSS RDS(on)*Qg PTOT ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b Application e O t e l ) o s ( s t Description b c u O d o ) r s P ( t c e t u e l d

antenova 30-30-A5839-01

Contextual Info: GS-BT2416C1.AT1 Bluetooth class 1 module with embedded SPP SW Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Bluetooth specification V.1.2 compliant Transmission rate up to 721 Kbps Output power class 1 20 dBm max Working distance up to 100 meters

ST T4 1060

Abstract: K822 Transistor k822
Contextual Info: STK822 N-channel 25V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 25V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

bluetooth Keyboard Mouse

Abstract: CAN4311 CAN4311* antenna yageo bluetooth antenna GS-BT2416C1 CAN43111 motherboard chip repairing
Contextual Info: GS-BT2416C1.AT1 Bluetooth class 1 module with embedded SPP SW Features • Bluetooth® specification V.1.2 compliant ■ Transmission rate up to 721 Kbps ■ Output power class 1 20 dBm max ■ Working distance up to 100 meters ■ ACL and SCO links ■

ST2N

Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications

stk8001

Abstract: JESD97 K800 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

JESD97

Abstract: K850 STK850
Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

90 ball VFBGA

Abstract: EMIF06 MCDAT31DIR VFBGA package tray DRFM
Contextual Info: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of STMicroelectronics have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - STMicroelectronics NV is replaced with ST-NXP Wireless.

k822

Contextual Info: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

Contextual Info: STK820 N-channel 25V - 0.005Ω - 21A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25V <0.0065Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested