03NB4 Search Results

03nb50

Contextual Info: BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHB110NQ08T

Contextual Info: PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

BUK9509-75A

Contextual Info: BUK9509-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

SB-4410

Abstract: fuse 3A 250V 03NB3 03NB3S 03NB4 04NB3 04NB3S 04NB4 10SB3 Fuse 240V 30 A
Contextual Info: NB SB SERIES SPECIFICATIONS INTRODUCTIONS 1. Power module incorporates an IEC connector, single or doublefuse IEC 5x20mm holder, and double-pole power switch, plus an EMI filter all-in-one easy-to-install unit. 2. All part numbers are UL, CSA and VDE approved.

BUK7509

Abstract: BUK7609-75A
Contextual Info: D2 PA K BUK7609-75A N-channel TrenchMOS standard level FET Rev. 03 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

03nb50

Abstract: BUK7509 BUK7509-75A
Contextual Info: TO -22 0A B BUK7509-75A N-channel TrenchMOS standard level FET Rev. 03 — 21 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK9509-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK7609-75A N-channel TrenchMOS standard level FET Rev. 03 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: TO -22 0A B BUK7509-75A N-channel TrenchMOS standard level FET Rev. 03 — 21 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9509-75A

Abstract: BUK9609-75A
Contextual Info: BUK9609-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

PHP110NQ08T

Contextual Info: PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

03NB3M

Abstract: cx 2601 Fuse 250V 4A 03NB4M 04NB3M 04NB4M 06NB3M 06NB4M 220 110 transformer transformer 4001
Contextual Info: NB SB SERIES SPECIFICATIONS INTRODUCTIONS 1. Maximum leakage current each line-to-ground @ 115VAC 60Hz: 2uA @ 250VAC 50Hz: 5uA 2. Hipot rating one minute line-to-ground: 2250VDC line-to-line: 1450VDC 3. Operating frequency: 50/60Hz 4. Rated voltage: 115/250VAC

03NB3

Abstract: 03NB3S 03NB4 04NB3 04NB3S 04NB4 10SB3
Contextual Info: COMPACT IEC CONNECTOR FILTERS SERIES SPECIFICATIONS INTRODUCTIONS 1. Power module incorporates an IEC connector, single or doublefuse IEC 5x20mm holder, and double-pole power switch, plus an EMI filter all-in-one easy-to-install unit. 2. All part numbers are UL, CSA and VDE approved.

Contextual Info: BUK9509-75A; BUK9609-75A TrenchMOS logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: COMPACT IEC CONNECTOR FILTERS SERIES V D E SPECIFICATIONS INTRODUCTIONS 1. Power module incorporates an IEC connector, single or doublefuse IEC 5x20mm holder, and double-pole power switch, plus an EMI filter all-in-one easy-to-install unit. 2. All part numbers are UL, CSA and VDE approved.

03nb50

Abstract: BUK7509-75A BUK7609-75A
Contextual Info: BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 01 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

L56-2

Abstract: 06-NB SB420
Contextual Info: COMPACT IEC CONNECTOR FILTERS SERIES SPECIFICATIONS INTRODUCTIONS 1. Power module incorporates an IEC connector, single or doublefuse IEC 5x20mm holder, and double-pole power switch, plus an EMI filter all-in-one easy-to-install unit. 2. All part numbers are UL, CSA and VDE approved.

Contextual Info: D2 PA K BUK9609-75A N-channel TrenchMOS logic level FET Rev. 4 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to