03MAR10 Search Results
03MAR10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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vs-10bq100
Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
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VS-10BQ100PbF J-STD-020, 2002/95/EC VS-10BQ100PbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 vs-10bq100 DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100 | |
V1F diode
Abstract: 10MQ040NP
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VS-10MQ040NPbF J-STD-020, 2002/95/EC VS-10MQ040NPbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 V1F diode 10MQ040NP | |
M8340102K
Abstract: M8340101M RZ010 m8340102
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M83401) MIL-PRF-83401 RZ010 RZ020, MIL-PRF-83401 MIL-STD-202, 2011/65/EU 2002/95/EC. 2002/95/EC M8340102K M8340101M m8340102 | |
diode marking code PBContextual Info: VS-10BQ030PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode |
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VS-10BQ030PbF J-STD-020, 2002/95/EC VS-10BQ030PbF 11-Mar-11 diode marking code PB | |
Contextual Info: VS-10MQ040NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of |
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VS-10MQ040NPbF J-STD-020, 2002/95/EC VS-10MQ040NPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of |
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VS-10MQ100NPbF J-STD-020, 2002/95/EC VS-10MQ100NPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
tantalum pentoxide dielectric strength
Abstract: 476 Tantalum Capacitor CWR06 CWR11 CWR16
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03-Mar-10 tantalum pentoxide dielectric strength 476 Tantalum Capacitor CWR06 CWR11 CWR16 | |
V1J diode
Abstract: V1j marking code DIODE V1J marking code VS-10MQ100NPBF Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N
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VS-10MQ100NPbF J-STD-020, 2002/95/EC VS-10MQ100NPbF 18-Jul-08 V1J diode V1j marking code DIODE V1J marking code Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N | |
10BQ015PBF
Abstract: MARKING V1C VS-10BQ015
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VS-10BQ015PbF J-STD-020, 2002/95/EC VS-10BQ015PbF 18-Jul-08 10BQ015PBF MARKING V1C VS-10BQ015 | |
Contextual Info: Custom Networks Vishay Techno Custom Thick Film Resistor Networks, Single-In-Line Molded or Conformal Coated SIPs and Dual-In-Line (Molded DIPs) FEATURES • Custom resistor, capacitor, diode and inductor network combinations • R, C, L, D multicomponent networks |
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MIL-PRF-83401 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: CRCA Vishay Dale Thick Film Resistor/Capacitor Chip Array, Surface Mount FEATURES • Single component reduces board space and • • • • • • • component counts Choice of dielectric characteristics X7R or Y5U Wrap around termination Thick film R/C element |
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CRCA12E CRCA12S 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
vsmb3940Contextual Info: VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability |
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VSMB3940X01 VSMB3940X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vsmb3940 | |
Contextual Info: REVISIONS THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES: BODY - STAINLESS STEEL 303, GOLD PLATING, .000030 THICK OVER NICKEL CONTACT - PHOSPHOR BRONZE, GOLD PLATING, .000030 THICK OVER COPPER INSULATOR - TORLON 2. ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC - 18 GHz |
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18-Dec-07 03-Mar-10 RD-DM10030101K 615X-2333-100 23-Mar-07 | |
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: PA 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C |
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UL94-V0 19-FEB-14 03-MAR-10 15-OCT-09 26-DEC-07 03-NOV-06 | |
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Contextual Info: VS-10MQ060NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of |
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VS-10MQ060NPbF J-STD-020, 2002/95/EC VS-10MQ060NPbF 11-Mar-11 | |
y5u capacitor
Abstract: res 3216 thick film chip resistor "thermal model"
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200trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 y5u capacitor res 3216 thick film chip resistor "thermal model" | |
MMKP 383 capacitorContextual Info: MMKP 383 Vishay BCcomponents AC and Pulse Double Metallized Polypropylene Film Capacitors MMKP Radial Potted Type 168x12 halfpage l w FEATURES w l h 7.5 mm bent back pitch. 15 mm to 27.5 mm lead pitch. Low contact resistance. Low loss dielectric. Small dimensions for high density packaging. |
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168x12 2002/95/EC 11-Mar-11 MMKP 383 capacitor | |
Contextual Info: 561R and 564R Series Vishay Cera-Mite Lower Voltage Ceramic Disc Capacitors 1 kVDC to 3 kVDC Low Dissipation Factor FEATURES Fig. 1 • Low losses 1.250" min. 32 mm D max. LO • High stability • Low DF minimizes self heating at HF • Ideal for high switching to 100 kHz |
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2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
V1F diode
Abstract: vs-10mq040npbf
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VS-10MQ040NPbF J-STD-020, 2002/95/EC VS-10MQ040NPbF 11-Mar-11 V1F diode | |
Contextual Info: DFP Vishay Dale Thick Film Resistor Networks, Flat Pack FEATURES • Isolated and bussed schematics available • 0.065" 1.65 mm height for high density packaging • Low temperature coefficient (- 55 °C to + 125 °C) ± 100 ppm/°C • Hot solder dipped leads |
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MIL-STD-202, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-10MQ060NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of |
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VS-10MQ060NPbF J-STD-020, 2002/95/EC VS-10MQ060NPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-10BQ060PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMB |
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VS-10BQ060PbF J-STD-020, 2002/95/EC VS-10BQ060PbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
V1F diode
Abstract: VS-10BQ040PbF 10BQ040pbf
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VS-10BQ040PbF J-STD-020, 2002/95/EC VS-10BQ040PbF 18-Jul-08 V1F diode 10BQ040pbf | |
Contextual Info: VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability |
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VSMB3940X01 VSMB3940X01 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |