03JUN2011 Search Results

Contextual Info: 2 THI S C DRAWI NG IS UNPUBL I SHE D. COPYRI GHT 20 BY RELEASED FOR P U B L I C A T I O N AL L - RI GHTS 20 LOC RESERVED. HK ASSEMBLY WIRE WILL PASS THRU 066 DIST REVISIONS oo LTR DESCRI PTI ON DATE DWN APVD El REVISED PER E C O - 11 - 0 1 1 6 1 2 03JUN2011

Contextual Info: 2 THI S C DRAWI NG IS UNPUBL I SHE D. COPYRI GHT 20 BY RELEASED FOR P U B L I C A T I O N AL L - RI GHTS 20 LOC RESERVED. HK ASSEMBLY WIRE WILL PASS THRU 066 DIST REVISIONS oo LTR DESCRI PTI ON APVD REVISED PER E C O - 11 - 0 1 1 6 1 2 03JUN2011 DLD DLD

Contextual Info: 2 THIS C D R A WI N G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED ALL - FOR PUBLICATION RI GHTS 20 LOC R ES ERVED. HK REVISIONS DIST oo LTR El ASSEMBLY WI RE WILL PASS THRU 0 6 6 REVISED PER DATE E C O - 11 - 0 1 1 6 1 2 DWN 03JUN2011 DLD APVD DLD OPENING

Contextual Info: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

Contextual Info: 2SK3019T N-Channel MOSFET P b Lead Pb -Free 3 1 2 FEATURES: 1. GATE * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

54NM65ND

Contextual Info: STW54NM65ND N-channel 650 V, 0.055 Ω typ., 49 A FDmesh II Power MOSFET with fast diode in a TO-247 package Datasheet — production data Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the

54NM65ND

Contextual Info: STW54NM65ND N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh II Power MOSFET with fast diode Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the fast recovery diode devices

Contextual Info: STL12N3LLH5 N-channel 30 V, 0.0079 Ω, 12 A, PowerFLAT 3.3 x 3.3 STripFET™ V Power MOSFET Features Order code VDSS RDS(on) max ID STL12N3LLH5 30 V < 0.009 Ω 12 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STEVAL-ICB007V1 Capacitive touch demonstration board based on the STMPE321 Data brief Description The STEVAL-ICB007V1 demonstration board employs STM32-based capacitive touch to demonstrate the functionality and performance of the STMPE321, a 3-channel capacitive touch key

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR A 1 POSITION DA1 POSITION GA1 PA1-3 3.00 5.50 C POSITION GE7 5 B DIM H 51.85 0.25 46.45 0.20 DATE REVISED PER ECO-14-005178 DWN

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. P LTR A 1 PCB SIDE HEADER SIDE ISOMETRIC VIEWS SCALE 3:1 0.28 POSITION GE7 C PC5-8 12.90 6.80 13.40 POSITION DA1 MATERIAL: HOUSING: THERMOPLASTIC, FLAMMABILITY RATING