03A DIODE Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate DIODE DK4148TTD03 SWITCHING DIODE - WBFBP-03A TOP DESCRIPTION Epitaxial planar Silicon diode 1.6x1.6×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diodes WBFBP-03A DKN222TTD03 1.6x1.6×0.5 unit: mm SWITCHING DIODE TOP + DESCRIPTION Epitaxial planar silicon diode + - FEATURES: High speed Suitable for high packing density layout

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diodes DK4148TTD03 SWITCHING DIODE - WBFBP-03A TOP DESCRIPTION Epitaxial planar Silicon diode 1.6x1.6×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package

DGS9-03AS

Contextual Info: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode A DGS 9-03AS C A DGS 10-03A Symbol C DGS 10-03A Conditions Maximum Ratings VRRM/RSM

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate DIODE MMBD4148E SWITCHING DIODE WBFBP-03A TOP DESCRIPTION Epitaxial planar Silicon diode 1.6x1.6×0.5 unit: mm + - 1. ANODE FEATURES Fast Switching Speed Ultra-Small Surface Mount Package

MMBD4148E

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate DIODE MMBD4148E SWITCHING DIODE WBFBP-03A TOP DESCRIPTION Epitaxial planar Silicon diode 1.6x1.6×0.5 unit: mm + - 1. ANODE FEATURES Fast Switching Speed Ultra-Small Surface Mount Package

2198

Abstract: SB0015-03A
Contextual Info: Ordering number:EN2198A SB0015-03A Schottky Barrier Diode 30V, 15mA Detection Applications Features Package Dimensions • Glass sleeve structure. · Detection efficiency : 70%. · Small size Half the size of the DO-35 heretofore in use unit:mm 1153A [SB0015-03A]

Contextual Info: MITSUBISHI Neh POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE FY6ACJ-03A 4 1 f • 4V DRIVE V d s s . .30 V • rDS ON (M AX). . 23m£2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diode WBFBP-03A DAN222E 1.6x1.6×0.5 unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diode WBFBP-03A DAN222E 1.6x1.6×0.5 unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.)

DVD-ROM

Abstract: DKN222TTD03
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diode WBFBP-03A DKN222TTD03 1.6x1.6×0.5 unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.)

2X61 06a

Abstract: 1602a DSEP 15-06A
Contextual Info: HiPerFRED Diodes ;P F Ï -& • DSEC. Type V RRM ► New V ► DSEP S-02A ► DSEP 8-03A ► DSEP 15-03A ► DSEP 29-03A ► ► *FAV @ TC *FSM 10 ms 45°C A v F @ *F max. ^V J M = 150°C A iRMS>@-di/dt typ. TVJ=25°C ns TVJ = 100°C A A/&IS A °C 200

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diode WBFBP-03A DK222TTD03 1.6x1.6×0.5 unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.)

Contextual Info: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V Marking V on product A 300 300 DGS 9-03AS C A 300 300 DGS 10-03A A TO-252 AA 9A030AS C DGS 10-03A TO-220 AC A C A C TAB

Contextual Info: DSEP2x91-03A V RRM = 300 V I FAV = 2x 90 A t rr = 30 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x91-03A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DSEP2x31-03A V RRM = 300 V I FAV = 2x 30 A t rr = 30 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x31-03A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: MITSUBISHI Neh POWER MOSFET FY5ACJ-03A HIGH-SPEED SWITCHING USE FY5ACJ-03A OUTLINE DRAWING CD Dimensions in mm 1.8 MAX. 5.0 SOURCE GATE DRAIN 0.4 1.27 • 4V DRIVE • V D S S . 30V

Contextual Info: MITSUBISHI Neh POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE FY7ACH-03A OUTLINE DRAWING Dimensions in mm 1.8 MAX. D SOURCE GATE d ®® DRAIN Q • 2.5V DRIVE • V d s s . 30V

Contextual Info: DSEP 2x 91-03A HiPerFREDTM Epitaxial Diode IFAV = 2x 90 A VRRM = 300 V = 30 ns trr with soft recovery Preliminary Data VRSM VRRM V V 300 300 miniBLOC, SOT-227 B Type DSEP 2x 91-03A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 65°C; rectangular, d = 0.5

2X91

Contextual Info: DSEP 2x 91-03A HiPerFREDTM Epitaxial Diode IFAV = 2x 90 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM VRRM V V 300 300 miniBLOC, SOT-227 B Type DSEP 2x 91-03A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 65°C; rectangular, d = 0.5

Contextual Info: MITSUBISHI Neh POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A • 4V DRIVE • V d s s . • rDS ON (MAX) . . 30 V .23m£2 .8A • Id . APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FY5ACH-03A HIGH-SPEED SWITCHING USE FY5ACH-03A * * • 2.5V DRIVE • V d s s . • . 30 V .50m£2 . 5A rDS ON (MAX) . • Id . APPLICATION M otor control, Lamp control, Solenoid control

FY10AAJ-03A

Contextual Info: MITSUBISHI Neh POWER MOSFET FY10AAJ-03A HIGH-SPEED SWITCHING USE FY10AAJ-03A OUTLINE DRAWING Dimensions in mm 1.8 MAX. 0.4 1.27 ©©SOURCE © G ATE © © © © DRAIN • 4V DRIVE • VDSS. 30 V

Contextual Info: DSEP 2x 91-03A HiPerFREDTM Epitaxial Diode IFAV = 2x 90 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRRM V V 300 300 miniBLOC, SOT-227 B Type DSEP 2x 91-03A Symbol Conditions Maximum Ratings IFRMS IFAVM IFRM TC = 65°C; rectangular, d = 0.5