037 G V Search Results

Contextual Info: BS870 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)

Contextual Info: 2N7002 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) Top View S .056 (1.43) .052 (1.33) 3 1 2 0.037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95)

Contextual Info: BS850 DMOS Transistors P-Channel D G SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)

gf2304

Contextual Info: GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 0.117Ω ID 2.5A TO-236AB (SOT-23) .016 (0.4) Top View 3 G .056 (1.43) .052 (1.33) 0.037 (0.95) 0.037 (0.95) 1. Gate 2. Source 3. Drain 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125)

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E V IS IO N S LTR DESCRIPTION 01 85.29 [3.358]' H O U SIN G -0.94+0.05 TYP [.037+.002] i- 2.41 -0.08 0.1 + .0 0 3

U037

Abstract: n199 AA13
Contextual Info: RUTROfllK MINISO8 Dirn. M in im a le re Min, Typ. M hk G.05G 0.100 0.160 Q.eeo Ü.94D M |n. M a i. l 1ÜD * ¿1 Irm lw s A2 0 0 *3 GOG2 O ttH u.uoe Ü ü.037 h Q.E5Ö 0.33D G.4GU Ü.DtO GÜ13 0.G15 c u 1» 0.1B0 D.2SO O.DD5 GMT Ü.GQ9 D ¿900 3.000 3.1ÜD

Contextual Info: PC-Board layout view component side 00,6 I- , J 1 11 • L l 69,7 max 1— 1— All Dimensions in mm Original Size DIN A4 A ll rig h ts res erve d Scale Free size tol. Ref. 1:1 Sub. Created by Inspected by Standardisation Department pp p g _ p p 09 67 037 4755

Contextual Info: Schottky MiniMod FST 81 Dim. Inches A C E F G H J K L M N P Millimeter Minimum Maximum Minimum Maximum Notes 1.180 .027 .350 1.490 .695 .088 .240 .115 .460 .065 .151 .015 1.195 .037 .370 1.510 .715 .098 .260 .135 .480 .085 .161 .025 Microsemi Catalog Number

MIL-S-8805

Abstract: m.s angle steel weight GEAR WORM
Contextual Info: m MICRO SWITCH FRttPORT ILLINOIS A OF D lV 'S tO N FED MFG. CO DE C A T A L O G L IS T IN G U S A 45EN1 - 6 SWITCH-ENCLOSED HONEYW ELL .037 DIA HOLE FOR W IRE LOCKING »1920 .050 WIDE X .050 DEEP SLOT — CIRCUITS I-3, 4-6,7-9 AND I0-I2 “ MADE — I5°MAX DIFFERENTIAL

AT1030

Contextual Info: Case Style AT AT1030 Outline Dimensions PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 CASE # A B C D E F G H .166 .150 .155 .050 .037 .025 .012 .060 4.22 (3.81) (3.94) (1.27) (0.94) (0.64) (0.30) (1.52) Dimensions are in inches (mm). Tolerances: 2 Pl. + .01; 3 Pl. + .005

NJ28D

Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process

MIL-STD-346A

Contextual Info: DESIGNED FOR USE . 14 1 S E M I “ R I G I D CABLE ENTRY REVISIONS WITH D E S C R IP T IO N CABLE DIAMETER 01 APPROVEO RELEASED MINI H U M CONTACT 037 HOUSING 1 2.6 2 PLACES ELE C T R IC A L Nominal Impedance OhmsJ M ECHANICAL 50 F r e q u e n c y R a n g e <GHz DC to 16

19PA10

Abstract: MIL-S-8805 DICO07370 GEAR WORM MIL-W-5088
Contextual Info: MICRO SWITCH FREEPORT. IL L IN O IS A OF D IV IS IO N F ro. MFC. CODE U S A HONEYW ELL A C A T A L O G L IS T IN G 41EN1 - 6 SWITCH-ENCLOSED 3 0 1 *R E F CIRCUITS I - 2 AND 4 - 5 MADE M IL I T A R Y STANDARD MS 2 4 4 2 0 - 1 919*0 -.037 DIA HOLE FOR WIRE LOCKING

TRIMMER capacitor 160 pF

Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e

mil-s-8805

Abstract: 4980A 44EN1-6 MIL-W-5088 MS24420-4
Contextual Info: T MICRO SWITCH FREEPORT. ILLINOIS. A OF DIVISION F E D. MFG. CODE 4 4 E N 1 -6 SWITCH-ENCLOSED U S A HONEYWELL 1 C A T A L O G LISTING M IL IT A R Y STANDARD MS 24420-4 91929 -.037 OIA H O L E FOR W IR E LO C K IN G 2 S 5 f'REF •C IR C U IT S 2 0 °max d if f e r e n t ia l

442EN1

Abstract: MIL-S-8805 N020 442EN1-6
Contextual Info: MICRO SWITCH FREEPORT ILLINOIS A OF DIVISION FED. M FG. CODE U S A HONEYWELL C A TALO G LISTING 4 42E N 1-6 SWITCH-ENCLOSED -.037 DIA HOLE FOR WIRE LOCKING .0 5 0 WIDE X . 0 5 0 DEEP »192* SLOT — 2 8 6 ° REF CIRCUITS -2 AND 4 - 5 MADE 12° MAX D IF F E R E N T IA L

PC 88

Contextual Info: 7 T H I S DRAWING JÊL COPYRIGHT 15 U N PU B L IS H E D . R E L E A S E D FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. 6 4 5 3 2 , 19 LOC ALL R IG H T S R ES E R V E D . DF D I ST REVISIONS DO DESCRIPTION REV PER 0 G 3 D - 0 0 5 3 - 0 0 103 037 R R A ISE D CAVITY

Contextual Info: 7 T H I S DRAWING JÊL COPYRIGHT 15 U N PU B L IS H E D . R E L E A S E D FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. 6 4 5 3 2 , 19 D I ST LOC ALL R IG H T S R ES E R V E D . DF REVISIONS DO DESCRIPTION REV PER 0 G 3 D - 0 0 5 3 - 0 0 R 103 037 R A ISE D CAVITY

cccp

Abstract: 6cn6 Scans-0017294
Contextual Info: CdSAOM O ¿ C C C P n p L C /J O p r n rtfii/d k u m u /x i /¿Z#037¿¿ c M e ^ /n o o c m a m u U jry v a ., y uS em C fr n o a * e c ¿ e v t» o t* f ie v e * v J > ^ 3 4 0 / 3A & x rri/s u . y g c a’O e a cÁ esr> cnr> ej< A tuve c#u e ¿ <xn*t*s£

Contextual Info: 231-111/037-000wago Группа изделий 3 Мультиштекерная система Вес 20,986 g Цвет серый Количество подключаемых проводов 11 Количество независимых цепей 11

Contextual Info: 231-110/037-000wago Группа изделий 3 Мультиштекерная система Вес 19,44 g Цвет серый Количество подключаемых проводов 10 Количество независимых цепей 10

Contextual Info: 231-105/037-000wago Группа изделий 3 Мультиштекерная система Вес 10,57 g Цвет серый Количество подключаемых проводов 5 Количество независимых цепей 5 число контактов

H957

Contextual Info: ZERO TEMPERATURE COMPENSATED REFERENCE DIODES Single Chip and Chip Stacks INDUSTRY STANDARD PART# MICROSEMI CHIP PART # (N o t* 1) DIE SIZE (N ot* 1) POWER RATING* DIE GEOMETRY DIE THICKNESS ( F lg u r* ) M ETA LLIZ A TIO N PACKAGING BACK OPTIONS WAFFLE F. VIAL

037 G V

Abstract: philips ELECTROLYTIC capacitors 037 17 CA philips 037 01 Philips 037 2222 037 68478 Philips capacitors "2222 037 tfa1001 58478 61221
Contextual Info: Aluminum Electrolytic Capacitors SMDw TECHNOLOGY Radial, Standard ^ ^ ^ % • m t % S e r ie s U se fi 1 R S M 037 R SH 044 1 R a d ia l S ta n d a rd M in ia tu re R a d ia l S ta n d a rd H igh V o ltag e I 2500 h/85 C life R e fe r e n c e d a ta h a n d b o o k : P A 0 1 -A