NCE035N30K
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NCEPOWER
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NCE035N30K is a channel enhancement mode power MOSFET with 30V drain-source voltage, 105A continuous drain current, and low on-resistance of 3.0mΩ typical at 10V gate-source voltage, suitable for high-frequency switching and DC/DC conversion applications. |
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JMTE035N06D
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 180A N-channel enhancement mode Power MOSFET in TO-263-3L package with RDS(on) less than 3.8 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency power management applications. |
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JMTC035N06D
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 180A N-channel enhancement mode power MOSFET in TO-220C package with RDS(on) less than 4.3 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. |
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NCEAP035N85GU
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NCEPOWER
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NCEAP035N85GU is an N-channel Super Trench II power MOSFET with 85 V drain-source voltage, 180 A continuous drain current, 2.7 mΩ typical RDS(ON) at 10 V VGS, suitable for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. |
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NCE035N30G
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NCEPOWER
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30V, 105A NCE035N30G power MOSFET with advanced trench technology, offering low RDS(ON) of 3.0 mΩ at VGS=10V, suitable for high-frequency switching and DC/DC conversion applications. |
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AKP035N85
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AK Semiconductor
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AKP035N85 N-Channel Super Trench II Power MOSFET with 85V drain-source voltage, 150A continuous drain current, 3.3mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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JMTK035N04L
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 150A, 3.6mΩ N-channel Power Trench MOSFET in TO-252-3L package with low on-resistance, high current capability, and optimized gate charge for power management and load switching applications. |
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JMTG035N04L
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 100A, 3mΩ N-channel Power Trench MOSFET in PDFN 5x6-8L package with low RDS(ON), high current capability, and optimized gate charge for power management and load switching applications. |
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JMTG035N04A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 100A N-channel enhancement mode power MOSFET in PDFN5x6-8L package with RDS(on) less than 3.5mΩ at VGS=10V, suitable for load switching, PWM, and power management applications. |
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AKP035N72
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AK Semiconductor
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AKP035N72 N-Channel Super Trench II Power MOSFET with 72V VDS, 140A ID, 3.3mΩ RDS(on) at VGS=10V, optimized for high-frequency switching and synchronous rectification applications. |
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AKP035N12
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP035N12 with 120V drain-source voltage, 190A continuous drain current, 3.0mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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JMTE035N04A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 150A N-channel Enhancement Mode Power MOSFET in TO-263 package with RDS(on) less than 4mΩ at VGS = 10V, suitable for power management and load switching applications. |
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JMTC035N04A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 150A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 4mΩ at VGS = 10V, featuring advanced trench technology, low gate charge, and 100% UIS and ΔVds tested for reliable power management applications. |
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NCE035N30K
