035-N Search Results
035-N Datasheets (13)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
JMTE035N06D
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 180A N-channel enhancement mode Power MOSFET in TO-263-3L package with RDS(on) less than 3.8 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency power management applications. | Original | ||||
NCE035N30K
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NCEPOWER | NCE035N30K is a channel enhancement mode power MOSFET with 30V drain-source voltage, 105A continuous drain current, and low on-resistance of 3.0mΩ typical at 10V gate-source voltage, suitable for high-frequency switching and DC/DC conversion applications. | Original | ||||
JMTC035N06D
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 180A N-channel enhancement mode power MOSFET in TO-220C package with RDS(on) less than 4.3 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. | Original | ||||
NCEAP035N85GU
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NCEPOWER | NCEAP035N85GU is an N-channel Super Trench II power MOSFET with 85 V drain-source voltage, 180 A continuous drain current, 2.7 mΩ typical RDS(ON) at 10 V VGS, suitable for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. | Original | ||||
NCE035N30G
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NCEPOWER | 30V, 105A NCE035N30G power MOSFET with advanced trench technology, offering low RDS(ON) of 3.0 mΩ at VGS=10V, suitable for high-frequency switching and DC/DC conversion applications. | Original | ||||
JMTG035N04L
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 100A, 3mΩ N-channel Power Trench MOSFET in PDFN 5x6-8L package with low RDS(ON), high current capability, and optimized gate charge for power management and load switching applications. | Original | ||||
JMTG035N04A
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 100A N-channel enhancement mode power MOSFET in PDFN5x6-8L package with RDS(on) less than 3.5mΩ at VGS=10V, suitable for load switching, PWM, and power management applications. | Original | ||||
AKP035N85
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AK Semiconductor | AKP035N85 N-Channel Super Trench II Power MOSFET with 85V drain-source voltage, 150A continuous drain current, 3.3mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
JMTK035N04L
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 150A, 3.6mΩ N-channel Power Trench MOSFET in TO-252-3L package with low on-resistance, high current capability, and optimized gate charge for power management and load switching applications. | Original | ||||
JMTE035N04A
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 150A N-channel Enhancement Mode Power MOSFET in TO-263 package with RDS(on) less than 4mΩ at VGS = 10V, suitable for power management and load switching applications. | Original | ||||
AKP035N72
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AK Semiconductor | AKP035N72 N-Channel Super Trench II Power MOSFET with 72V VDS, 140A ID, 3.3mΩ RDS(on) at VGS=10V, optimized for high-frequency switching and synchronous rectification applications. | Original | ||||
AKP035N12
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AK Semiconductor | N-Channel Super Trench II Power MOSFET AKP035N12 with 120V drain-source voltage, 190A continuous drain current, 3.0mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
JMTC035N04A
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 150A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 4mΩ at VGS = 10V, featuring advanced trench technology, low gate charge, and 100% UIS and ΔVds tested for reliable power management applications. | Original |
035-N Price and Stock
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Maxecho Technologies Corp HBLS0603-5N1S_MFIXED IND 5.1NH 270MA 330 MOHM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HBLS0603-5N1S_M | Tape & Reel | 15,000 | 15,000 |
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Infineon Technologies AG BSZ035N03MSGATMA1MOSFET N-CH 30V 18A/40A 8TSDSON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ035N03MSGATMA1 | Tape & Reel | 5,000 | 5,000 |
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BSZ035N03MSGATMA1 | 52,239 | 1 |
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BSZ035N03MSGATMA1 | Cut Tape | 9,365 | 0 Weeks, 1 Days | 1 |
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BSZ035N03MSGATMA1 | 53 Weeks | 5,000 |
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Taiwan Semiconductor TSM035NB04CZMOSFET N-CH 40V 18A/157A TO220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM035NB04CZ | Tube | 3,617 | 1 |
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ROHM Semiconductor RXL035N03TCRNCH 30V 3..5A SMALL SIGNAL MOSFE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RXL035N03TCR | Cut Tape | 2,900 | 1 |
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RXL035N03TCR | 5,870 |
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RXL035N03TCR | Cut Tape | 3,000 | 0 Weeks, 1 Days | 5 |
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Infineon Technologies AG IPB035N08N3GATMA1MOSFET N-CH 80V 100A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB035N08N3GATMA1 | Cut Tape | 1,170 | 1 |
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IPB035N08N3GATMA1 | Ammo Pack | 1 |
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Get Quote | ||||||
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IPB035N08N3GATMA1 | Cut Tape | 30 | 1 |
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IPB035N08N3GATMA1 | 1,000 | 1 |
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Buy Now | ||||||