02SEP04 Search Results
02SEP04 Datasheets Context Search
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S 14 G LTR DESCRIPTION N REV PER 0G 3A—0 5 8 2 —0 4 DATE DWN APVD 02SEP04 JR TM D D A D IA STAMP AMP 2 2 - 1 8 * APPROX AS SHOWN |
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02sep04 | |
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC G ALL RIGHTS RESERVED. REVISIO NS 14 LTR DESCRIPTION L REV PER 0G 3A—0 5 8 2 —0 4 DATE DWN APVD 02SEP04 JR TM D D D IA A STAMP AMP 2 2 - 1 8 * APPROX AS SHOWN |
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02sep0431mar2000 | |
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Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 00 R E V IS IO N S LTR AM DESCRIPTION ECO 0 6 DATE DWN 01SEP06 013891 APVD BSV GSR 1.68 D D MATES WITH APPROPRIATE UNIVERSAL |
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01sep0602sep0431mar2000 | |
S594TX
Abstract: S594TXR S594TXRW mg sot-143 smd transistor marking sep
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s594tx/s594txr/s594txrwot-143ot-143rot-343r+7 | |
FP748
Abstract: C664
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02sep0403sep04fp748c664 | |
1-480710-1
Abstract: PLC 168
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02sep041-480710-1plc 168 | |
1N5245C
Abstract: 1N5243C 1N5221C-1 1n5232c 1N5231C
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1n5221c1n5267cdo-3508-apr-05+5 | |
E41859
Abstract: LR-15775 914CE22-12 LR 15775
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914ce22-1202sep04e418591/10hp+2 | |
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Contextual Info: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A DPAK Planar STripFET MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STD95N04 • ■ ■ Figure 1: Package VDSS RDS on ID Pw 40 V < 6.5 mΩ 80 A (*) 110 W 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) |
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std95n04o-252 | |
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Contextual Info: S525T VISHAY Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode 1 Features • Integrated gate protection diodes • Low feedback capacitance • Low noise figure 2 3 Applications High frequency stages up to 300 MHz. D G Mechanical Data |
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s525tot-23d-7402502-sep-04 | |
DIN 16901-130
Abstract: MP 1009 es DIN+16901+130 TRW Connector clip TRW clip 49001301
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zusammenbau49001301c49001301cdin 16901-130mp 1009 es+4 | |
1-480710-1Contextual Info: 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D ALL COPYRIGHT - FOR 6 5 4 3 2 PU B LIC ATIO N RIG HTS D IS T LOC R E S ER V ED . CM BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S 00 LTR AM AM 1 DATE D E S C R IP T IO N APVD DWN ECO 0 6 013891 01SEP06 |
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31mar2000eco-09-02182601sep0607sep09+2 | |
smd transistor 982 sot143Contextual Info: S593T/S593TR/S593TRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • SOT-143R 4 3 1 4 Low noise gain controlled input stages in UHF-and |
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s593t/s593tr/s593trwot-143ot-143rot-343r+4 | |
1N5245C
Abstract: 1N5250 TL 104 Z 1N5231C
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1n5221c1n5267cdo-35d-74025+5 | |
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720 mos TRANSISTOR smd sotContextual Info: S594T / S594TR / S594TRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • SOT-143R 4 3 1 4 Low noise gain controlled input stages in UHF-and |
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s594ts594trs594trwot-143+5 | |
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Contextual Info: BF964S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance |
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bf964sbf961d-7402502-sep-04 | |
1N5245C
Abstract: 1N5224C 1N5221C 1N5222C 1N5223C 1N5225C 1N5226C 1N5227C 1N5228C 1N5267C
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1n5221c1n5267cdo-3518-jul-08+8 | |
mg sot-143
Abstract: SG1C S593TX S593TXR S593TXRW SMD transistor 26 sot 23 sot343r
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s593tx/s593txr/s593txrwot-143ot-143rot-343r+9 | |
Vishay Roederstein EYK
Abstract: 1X45 ROEDERSTEIN EY Roederstein
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zub4501hum800x02-sep-04zub3001n80000xzub3002p80000x+4 | |