02APR07 Search Results

Contextual Info: 107-68501 Packaging Specification 02Apr07 Rev B CONTACT, AMP-DUAC POWER CONN,LOOSE PIECE 1. PURPOSE 目的 Define the packaging specifiction and packaging method of CONTACT, AMP-DUAC POWER CONN,LOOSE PIECE. 订定 CONTACT, AMP-DUAC POWER CONN,LOOSE PIECE 产品之包装规格及包装方式。

lEC60947-5-1

Abstract: EN60947-5-1
Contextual Info: 4 F O - 551 1 2 - A HONEYWELL PART NUMBER 3 2 REV DOCUMENT CHANGED BY CHECK B 0033725 JA 14SEP07 PSR ?1MCE27 SERIES CHART1 M12 X1 OPERATING CHARACTERISTICS 0 8+ 0.5 AA D 91MCE27 NOMENCLATURE TREE Snap Action 1NO/1 NC BROWN 9 BLACK 13 o 27- I91M C E Slow Action

MC9S12XF512RMV1

Abstract: S12XF temperature controller CHB 401 asea MBT 225 PMF15B6C MC9S12XF256 P112l ifr 2310 Operating Manual ASEA motor b3 freescale superflash
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512RMV1 Rev.1.20 10-Nov-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

manual temperature controller CHB 702

Abstract: MC9S12XF asea MBT 160 S12XF256 NVP 1204 1M64J S12XF384 transistor f a614 729 PIN CONFIGURATION 2M64J Logic Cross-Reference
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.17 02-October-2008 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

electrolytic capacitor smd code marking

Abstract: smd transistor marking zf P125 IEC 60384-4 175 TMP
Contextual Info: 175 TMP Vishay BCcomponents Aluminum Capacitors High Temperature Solid Electrolytic SMD FEATURES • Polarized aluminum electrolytic capacitors SMD, solid electrolyte MnO2 • Extremely long useful life, 20 000 hours/125 °C • Extended usable temperature range up to 175 °C

2N7002K

Abstract: AN609
Contextual Info: 2N7002K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

xp1003bd

Abstract: DM6030HK TS3332LD
Contextual Info: 27.0-35.0 GHz GaAs MMIC Power Amplifier P1003-BD April 2007 - Rev 02-Apr-07 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7004-BD Features Chip Layout Low Operating Voltage: 5V 32.0 dBm Output IP3 @ 850 MHz 3.6 dB Noise Figure @ 850 MHz 16.5 dB Gain @ 850 MHz 17.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7005-BD Features Chip Layout Low Operating Voltage: 5V 32.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.0 dB Gain @ 850 MHz 17.6 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

P112l

Abstract: MC9S12XF MC9S12XF512V1RM freescale user manuals of MC9S12XF512 MC9S12XF512 motor driver ic 7324 1218 footprint IPC IFR 740 freescale superflash S12X
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.19 18-May-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

xp1003bd

Abstract: P1003-BD xp1003-bd DM6030HK TS3332LD
Contextual Info: 27.0-35.0 GHz GaAs MMIC Power Amplifier P1003-BD April 2007 - Rev 02-Apr-07 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7006-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 4.1 dB Noise Figure @ 850 MHz 15.2 dB Gain @ 850 MHz 18.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: 27.0-35.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 02-Apr-07 P1003-BD Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept OIP3

Contextual Info: F 0 -5 5 1 7 5 -A 16 14 15 13 12 10 11 8 7 HONEYWELL PART NUMBER 91MCE16 SERIES CHART1 m 18 +0.5 i« 4 REV DOCUMENT E 0094673 CHANGED BY SBH CHECK CMH 100CT12 18+0.5 n 5 3X910.8 91MCE16 NOMENCLATURE TREE 91MCE "h B 1 16 OPTIONAL MODIFICATION CODE SEE INDIVIDUAL

m 9834

Abstract: AN609 Si1907DL
Contextual Info: Si1907DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1016X
Contextual Info: Si1016X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

70431

Abstract: AN609 Si1023X
Contextual Info: Si1023X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

temperature controller CHB 402 manual

Abstract: MC9S12XF384
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512RMV1 Rev.1.20 10-Nov-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

CGB7004-BD

Abstract: CGB7004-BD-000V DM6030HK TS3332LD sharp 0623
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7004-BD Features Chip Layout Low Operating Voltage: 5V 32.0 dBm Output IP3 @ 850 MHz 3.6 dB Noise Figure @ 850 MHz 16.5 dB Gain @ 850 MHz 17.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

CGB7003-BD

Abstract: CGB7003-BD-000V DM6030HK TS3332LD CGB7003
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7003-BD Features Chip Layout Low Operating Voltage: 5V 31.5 dBm Output IP3 @ 850 MHz 2.9 dB Noise Figure @ 850 MHz 20.7 dB Gain @ 850 MHz 16.6 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

CGB7006-BD

Abstract: CGB7006-BD-000V DM6030HK TS3332LD
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7006-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 4.1 dB Noise Figure @ 850 MHz 15.2 dB Gain @ 850 MHz 18.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

MAT 10050

Abstract: CGB7005-BD CGB7005-BD-000V DM6030HK TS3332LD 02APR07
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7005-BD Features Chip Layout Low Operating Voltage: 5V 32.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.0 dB Gain @ 850 MHz 17.6 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7005-BD Features Chip Layout Low Operating Voltage: 5V 32.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.0 dB Gain @ 850 MHz 17.6 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 02-Apr-07 CGB7004-BD Features Chip Layout Low Operating Voltage: 5V 32.0 dBm Output IP3 @ 850 MHz 3.6 dB Noise Figure @ 850 MHz 16.5 dB Gain @ 850 MHz 17.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature