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    027N10N Search Results

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    Infineon Technologies AG BSC027N10NS5ATMA1

    MOSFET N-CH 100V 23A/100A TSON
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    DigiKey BSC027N10NS5ATMA1 Tape & Reel 19,991 5,000
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    Mouser Electronics BSC027N10NS5ATMA1 20,426
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    Newark () BSC027N10NS5ATMA1 Tape & Reel 564 100
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    BSC027N10NS5ATMA1 Cut Tape 564 1
    • 1 $5.77
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    Bristol Electronics BSC027N10NS5ATMA1 5,000
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    Rochester Electronics BSC027N10NS5ATMA1 10,936 1
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    TME BSC027N10NS5ATMA1 5,000
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    EBV Elektronik BSC027N10NS5ATMA1 53 Weeks 5,000
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    Win Source Electronics BSC027N10NS5ATMA1 14,580
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    UMW IPB027N10N3G

    MOSFET N-CH 100V 120A D2PAK
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    DigiKey () IPB027N10N3G Tape & Reel 1,600 800
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    IPB027N10N3G Cut Tape 216 1
    • 1 $2.50
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    IPB027N10N3G Digi-Reel 216 1
    • 1 $2.50
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    Infineon Technologies AG ISC027N10NM6SCATMA1

    IFX FET >80 - 100V
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    DigiKey ISC027N10NM6SCATMA1 Tape & Reel 4,000
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    Infineon Technologies AG IPB027N10N3 G

    MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3
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    Mouser Electronics IPB027N10N3 G 4,677
    • 1 $6.10
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    • 1000 $2.33
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    Infineon Technologies AG IPB027N10N3GATMA1

    MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3
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    Mouser Electronics IPB027N10N3GATMA1 1,226
    • 1 $6.02
    • 10 $4.09
    • 100 $3.05
    • 1000 $2.65
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    Newark () IPB027N10N3GATMA1 Cut Tape 1,679 1
    • 1 $5.98
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    • 100 $2.86
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    IPB027N10N3GATMA1 Tape & Reel 1,679 100
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    IPB027N10N3GATMA1 Tape & Reel 1,000
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    Bristol Electronics IPB027N10N3GATMA1 3,203
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    Rochester Electronics IPB027N10N3GATMA1 1,000 1
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    TME IPB027N10N3GATMA1 1
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    Rutronik IPB027N10N3GATMA1 Tape & Reel 18,000 1,000
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    Chip 1 Exchange IPB027N10N3GATMA1 2,879
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    EBV Elektronik IPB027N10N3GATMA1 3,000 9 Weeks 1,000
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    Win Source Electronics IPB027N10N3GATMA1 25,970
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    027N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    027N10N

    Abstract: IPB027N10N3 IEC61249-2-21 JESD22
    Contextual Info: 027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPB027N10N3 IEC61249-2-21 PG-TO263-3 027N10N 027N10N IEC61249-2-21 JESD22 PDF

    027N10N

    Abstract: IPB027N10N3 JESD22
    Contextual Info: 027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPB027N10N3 PG-TO263-3 027N10N 027N10N JESD22 PDF