0259M Search Results

3170A

Abstract: IC 3170A
Contextual Info: Ordering num ber:EN 3170A r SGD-100T NO.3170A GaAs Schottky Barrier Diode C to X Band, Mixer, Modulator Applications 4.5 4 150 50 150 —55 to + 150 230 mm °c °c typ max unit 0.8 6.0 0.3 1.5 0.9 0.4 3.0 > 4.0 unit V V mA mA °C > Features • Very small-sized ceramic package.

Contextual Info: O rdering num ber :EN3169A f _S G D 1 GaAs Schottky Barrier Diode N0.3169A C to X Band, Mixer, Modulator Applications Features • Very small-sized package. • Less parasitic components, conversion loss. unit V 4.5 V 4 150 mA 50 mA 150 °C - 5 5 to + 150 °C

3193A

Abstract: FC803 SB007W03C SB007W-03C
Contextual Info: Orderin g nu m b e r :E N 3 1 9 3 A F eatu re s • Low forward voltage Vp max = 0.55V . •Fast reverse recovery time (trr max = 10ns). ■Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.

UHF DETECTOR

Abstract: 1SS345 marking AH LSS-34-5
Contextual Info: O rdering num ber: EN3157B ^_ 1 S S 3 4 5 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications F e a tu re s •Small interterm inal capacitance C = 0.45pF typ . • Low forward voltage and excellent detection efficiency (Vp = 0.35V max)

FC804

Abstract: SB02-03C
Contextual Info: Ordering num ber:E N 3194A FC804 Silicon Schottky Barrier Diode 30V, 200m A Rectifier F e a tu re s •Low forward voltage Vp max = 0.55V . ■F ast reverse recovery time (trr max = 10ns). • Composite type with 2 diodes contained in the CP package currently in use, improving the mounting