022 020 TRANSISTOR Search Results

2N1305 TEXAS INSTRUMENTS

Abstract: 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711
Contextual Info: Germanium Transistors T ype C a se No. C o *" " 0 0 c <u o « o “ NPN 2N388 T05 A General 2N388A T05 A Purpose 2N1302 T05 A and Switching 2N1304 T05 A 2N1305 T05 A 2N1308 T05 A S P E C IA L C h a ra c te ris tic s M axim u m R a tin g s at 25°C amb. •¿z 0>

M38527

Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Contextual Info: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)

14202

Contextual Info: M60 Section 6 FREV2 11/23/11 12:03 PM Page 98 MICRO JACKS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors, resistors, diodes, IC’s and similar

Contextual Info: M60 Section 6 FREV1A1-COLOR 4/4/13 5:29 PM Page 98 MICRO JACKS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors, resistors, diodes, IC’s and similar

multispring

Abstract: ASTM-B16 MIL-T-10727
Contextual Info: M55-S-NPS Final 10-08:M55 -NPS final revise 8-08 11/20/08 9:23 AM Page 4 MICRO MICROJACKS PINS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors,

FD9515

Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
Contextual Info: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International

data base dpak

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT200PPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.3V(max.)(IC=500mA) * High saturation current capability. DPAK CONSTRUCTION .024 (0.60)

CHT210PGP

Abstract: cht210
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT210PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.3V(max.)(IC=-500mA) * High saturation current capability. DPAK CONSTRUCTION

PNP 2A DPAK

Abstract: data base dpak
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT210PPT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.3V(max.)(IC=-500mA) * High saturation current capability. DPAK CONSTRUCTION

j117 motorola

Abstract: motorola j117
Contextual Info: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station

data base dpak

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT5113PPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts CURRENT 6 Amperes APPLICATION * High current amplifier. FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.55V(Max.)(IC/IB=6A/0.3A) .050 (1.27)

d667 transistor

Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
Contextual Info: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.

Contextual Info: WJ-RA62/SMRA62 2000 to 6000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 1.5-6.2 GHz TYP. MEDIUM GAIN: 16.0 dB (TYP.) MEDIUM OUTPUT POWER: +13.0 dBm (TYP.) LOW NOISE FIGURE: 4.0 dB (TYP.) Outline Drawings

transistor BC 157

Abstract: 13000 transistor TO-220
Contextual Info: u u U A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings

Wja66

Contextual Info: WJ-A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: 4.0 dB (TYP.) HIGH OUTPUT LEVEL: +15 dBm (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°, 100 -1000 MHz

2SB1182GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK DPAK .050 (1.27) .030 (0.77) * PC= 1.5 W (mounted on ceramic substrate).

MO-193 footprint

Abstract: CA 4570 QCI-39000
Contextual Info: PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Microcontroller Products

QCI-39000

Contextual Info: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52

QCI-39000

Abstract: C04090 C04-067
Contextual Info: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52

68L SOT 353

Abstract: tip 3035 transistor C04-067 footprint jedec MS-026 TQFP SP-750 footprint jedec MS-026 TQFP 128 C0421 30014 c04090 transistor wm
Contextual Info: SECTION 11 PACKAGING Outlines and Parameters . 1 Product Tape and Reel Specifications . 58

BPX81-4

Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
Contextual Info: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291

transistor c108

Abstract: C-108 SDT89501 SDT895
Contextual Info: [^ ©yeTT ©attäl « IDevices. Inc. M E D IU M TO HIGH V O L T A G E , HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: ► 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available

NPN Transistor 50A 400V

Abstract: SDT99504 SDT99704 SDT99904 TO114 400v 50A Transistor
Contextual Info: -JButron Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR ¿1 CONTACT METALLIZATION Base and emitter. > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

Contextual Info: -Jfotttjron fp @® yi(gìr ä t ä il ©( Devices. Inc. M E D IU M TO H IG H V O LT A G E , H IG H C U R R E N T CHIP NUMBER PN P EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: ► 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available