021REF Search Results

Contextual Info: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage

MMDT3904

Contextual Info: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C)

MMDT2907A

Contextual Info: MMDT2907A PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features .055 1.40 .047(1.20) o .026TYP (0.65TYP) 8 o .021REF (0.525)REF Power dissipation PCM : 0.15 W (Tamp.= 25 C)

MMDT2227

Abstract: PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente
Contextual Info: MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features o .055 1.40 .047(1.20) Power dissipation .026TYP (0.65TYP) PCM : 0.2 W (Tamp.= 25 C) O .021REF (0.525)REF Collector current ICM : 0.2/-0.2 A

MMDT3906

Abstract: transistor Vbe 1 Vbe 40 transistor
Contextual Info: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46)

DTC114E

Abstract: 1k transistor marking DTA114E marking D3 LI20
Contextual Info: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA114E and DTC114E transistors are built-in a SOT-363 package.

Contextual Info: BC847PN NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.2 W (Tamp.= 25 C)

Contextual Info: MMDT847 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) * Features o 8 o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation .053(1.35) .045(1.15) .096(2.45) .085(2.15) PCM : 0.3 W (Temp.= 25 C)

BC847S

Abstract: SC70-6
Contextual Info: BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)

MMDT4403

Abstract: transistor EB 525
Contextual Info: MMDT4403 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : - 0.6 A C2 Collector -base voltage

MMDT2222A

Abstract: 1N914
Contextual Info: MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) 8 o .021REF (0.525)REF Power dissipation O Collector current : 0.6 A C1 B2 .018(0.46) .010(0.26) E2 .014(0.35) .006(0.15)

sot-363 n-channel mosfet

Abstract: 2N7002DW Small Signal MOSFET
Contextual Info: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol

Contextual Info: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C) O ICM .053(1.35 .045(1.15 .096(2.45)

Contextual Info: MMDT8050 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF O PCM : 0.15 W (Tamp.= 25 C) ICM .053(1.35 .045(1.15 .096(2.45)

BC857S

Contextual Info: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)

MMDT5401

Abstract: MMDT5551
Contextual Info: MMDT5401 Plastic-Encapsulate Multi-Chip PNP+PNP Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1

UMH15N

Abstract: DTC144T transistor H15 marking H15 multi emitter transistor 003 SOT363
Contextual Info: UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) Features * Two DTC144T chips in a package o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference.

UMH9N

Contextual Info: UMH9N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features * Transistor elements are independent, eliminating interference. .018(0.46)

UMH11N

Abstract: marking h11 H11 sot-363 DTC114E
Contextual Info: UMH11N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 Features .055 1.40 .047(1.20) * Mounting possible with UMT3 automatic mounting machines. o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent,

UMD3N

Abstract: Digital Transistor marking D3 DTC114E DTA114E
Contextual Info: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 6 Features .026TYP (0.65TYP) 5 4  * Transistor elements are independent, 1 eliminating interference. (3) (2) R1 3 2 .014(0.35) .006(0.15)

marking code 22

Abstract: SOT 363 marking CODE 039
Contextual Info: KS05K5 VOLTAGE: 5.0 V Elektronische Bauelemente 100 W Transient Voltage Suppressors Diode RoHS Compliant Product DESCRIPTION SOT-363 . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.

MMDT4401

Contextual Info: MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product * Features SOT-363 .055 1.40 .047(1.20) : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : 0.6 A C2 Collector-Base vVoltage B1 E1 .014(0.35) .006(0.15) .006(0.15)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components RB480KS Features • • • • • • 40 Volts Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Diode Marking .006

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# RB480K Features • • • 40 Volts Schottky Barrier Diode Low Current Rectification High Reliability Marking: 3T SOT-343 Maximum Ratings