020N06N Search Results
020N06N Price and Stock
Infineon Technologies AG IPP020N06NXKSA1TRENCH 40<-<100V |
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IPP020N06NXKSA1 | Tube | 458 | 1 |
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IPP020N06NXKSA1 | Tube | 18 Weeks | 50 |
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Infineon Technologies AG IPP020N06NAKSA1MOSFET N-CH 60V 29A/120A TO220-3 |
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IPP020N06NAKSA1 | Tube | 234 | 1 |
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IPP020N06NAKSA1 | Tube | 13,750 | 18 Weeks | 1 |
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IPP020N06NAKSA1 | 350 | 2 |
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IPP020N06NAKSA1 | 1 |
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Infineon Technologies AG IPI020N06NAKSA1MOSFET N-CH 60V 29A/120A TO262 |
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IPI020N06NAKSA1 | 20 | 1 |
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IPI020N06NAKSA1 | 1 |
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IPI020N06NAKSA1 | 818 |
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020N06N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IPP020N06N
Abstract: 020n06n
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Original |
IPP020N06N IEC61249-2-21 PG-TO220-3 020N06N 50K/W IPP020N06N 020n06n | |
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Contextual Info: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel |
Original |
IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N | |
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Contextual Info: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel |
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IPP020N06N IEC61249-2-21 PG-TO220-3 020N06N | |
PG-TO262-3Contextual Info: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications |
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IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W PG-TO262-3 | |
ipi020nContextual Info: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel |
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IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W ipi020n | |
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Contextual Info: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel |
Original |
IPP020N06N PG-TO220-3 IEC61249-2-21 020N06N | |
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Contextual Info: Type 020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications |
Original |
IPP020N06N IEC61249-2-21 PG-TO220-3 020N06N |