GD55B02GE
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GigaDevice Semiconductor (Beijing) Inc
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2G-bit Serial Flash, SPI, Quad SPI, DTR mode, Quad I/O & Quad output 532Mbits/s, DTR Quad I/O 720Mbits/s. |
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2N7002G
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Shikues Semiconductor
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N-Channel Enhancement Mode FET, VDS 60V, ID 340mA, RDS(ON) <2.5ohm @ VGS=10V, <3.0ohm @ VGS=4.5V. |
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RF21010H02GA
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JWD
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RoHS compliant 1x2 tab-up ICMs for CAT 5/6 UTP cables, rated for 260°C peak wave solder, 1500Vrms isolation, with insertion loss of -1.0dB and return loss of -10dB from 1–100MHz, suitable for 10/100 or 1G Ethernet. |
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RVA2011G02GA
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JWD
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RoHS compliant top entry ICMs for CAT 5/6 and better UTP cables, featuring 260 °C peak wave solder temperature rating, 350 uH minimum OCL at 8mA bias, and compliance with IEEE 802.3 standards. |
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2N7002-G
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JCET Group
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N-channel MOSFET in SOT-23 package with 60 V drain-source voltage, 115 mA continuous drain current, and low on-resistance of 5 ohms at 10 V gate-source voltage, suitable for load switching and DC/DC conversion applications. |
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1N4002G
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AK Semiconductor
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1N4002G through 1N4007G are DO-41 surface mount silicon rectifiers with reverse voltage ratings from 100 to 1000 V, 1 A average forward current, 30 A peak surge current, and glass passivated junctions suitable for high reliability applications. |
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RVA1016G02GA
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JWD
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RoHS compliant top entry ICMs with peak wave solder temperature rating of 260 °C, suitable for CAT 5 and 6 fast Ethernet cables, featuring 350 uH minimum OCL at 8mA bias current, and meeting IEEE 802.3 standards. |
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RF21115G02GA
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JWD
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RoHS-compliant 1x2 TAB-up ICMs for CAT 5/6 UTP cables, supporting 10/100 or 1G Ethernet, with 350 µH minimum OCL, 260 °C peak wave solder rating, and LED options in green, yellow, or amber. |
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GD55B02GF
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GigaDevice Semiconductor (Beijing) Inc
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1G-bit Serial flash, supports SPI, Dual/Quad SPI. Dual I/O: 266Mbit/s, Quad I/O: 532Mbit/s. |
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RM67115H02GA
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JWD
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RM6 series RJ45 connectors support 10/100 Mbps and 1 Gbps Ethernet, feature RoHS-compliant peak wave solder rating at 260 °C, 350 µH minimum OCL, LED options in green and yellow, and comply with IEEE 802.3 standards. |
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GD55LB02GE
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GigaDevice Semiconductor (Beijing) Inc
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Supports SPI, Quad SPI, and DTR mode. Quad output data speed: 664Mbits/s. Quad I/O data speed: 532Mbits/s. DTR Quad I/O data speed: 720Mbits/s. |
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1N4002G
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Shikues Semiconductor
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Reverse Voltage 50-1000V, Forward Current 1A, Cathode, Anode, 25°C ambient. |
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JBE102G
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JBE102G in TO-263-3L package with 100V drain-source voltage, 2.3mOhm RDS(ON) at 10V VGS, 206A continuous drain current, and low gate charge for high-efficiency power switching applications. |
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VS3602GPMT
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VANGUARD
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30V/200A N-Channel Power MOSFET with ultra-low on-resistance of 0.6 mOhm at VGS=10V, available in PDFN5x6 package, featuring high efficiency, fast switching, and 100% avalanche tested design. |
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RF1112KG02GA
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JWD
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RF1 SERIES 1x1 TAB-UP ICMs for CAT 5/6 UTP cables, RoHS compliant, 260°C peak wave solder rated, 350 µH minimum OCL at 8mA, supports 10/100 or 1G Ethernet, with EMI fingers and LED options. |
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RA21621H02GA
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JWD
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RoHS compliant 1x2 tab-down ICMs for CAT 5/6 Fast Ethernet, rated 260°C for peak wave solder, 350 µH minimum OCL at 8mA, with insertion loss -1.0dB, return loss -10dB, crosstalk -30dB, CMRR -30dB, and 1500Vrms isolation. |
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RA19013H02GA
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JWD
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RA1 SERIES 1x1 tab-down ICMs support 10/100/1000/2.5/5G Ethernet, RoHS compliant, rated for 260°C peak wave solder, with insertion loss from -1.0dB to -2.0dB and minimum 1500Vrms isolation per IEEE 802.3. |
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GD55LB02GF
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GigaDevice Semiconductor (Beijing) Inc
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2G-bit Serial NOR Flash, supports SPI, Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s. |
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KBP302G
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Shenzhen Heketai Electronics Co Ltd
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3.0A glass passivated bridge rectifier with reverse voltage ratings from 50 to 1000V, surge current withstand up to 60A peak, and forward voltage drop of 1.1V per element at 2.0A. |
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GD55B02GE
