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02EB11
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Curtis Industries
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Line Filters, Filters, FILTER POWER LINE EMI 2A FASTON |
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02EB33
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Curtis Industries
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Line Filters, Filters, FILTER POWER LINE EMI 2A WIRE |
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02EK11
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Curtis Industries
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Line Filters, Filters, FILTER POWER LINE EMI 2A FASTON |
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02EK33
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Curtis Industries
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Line Filters, Filters, FILTER POWER LINE EMI 2A WIRE |
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02ER11
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Curtis Industries
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Line Filters, Filters, FILTER POWER LINE EMI 2A FASTON |
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02ER33
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Curtis Industries
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Line Filters, Filters, FILTER POWER LINE EMI 2A WIRE |
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KP522302E/08E
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Kiwi Instruments
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高效率 30V 2A 500kHz 同步降压转换器 KP52230XE 是一款简单易用高效率的同步降压直流/直流转换器，它具有 4.5V 至 30V 的宽输入电压范围，能够驱动高达 2A 的负载电流，非常适合用于 12V 和 24V 等常见的输入电源轨。 KP522302E 轻载下工作在脉冲频率调制模式 (PFM) 以维持高轻载效率；KP522308E 轻载下工作在强制脉宽调制模式 (FPWM) 以实现全负载电流下固定的开关频率和低输出纹波。 KP52230XE 的典型开关频率为 500kHz，采用低开关速率设计适用于有 EMI 要求的场合。 通过集成 MOSFET 并采用 TSOT23-6 封装，该器件可实现高功率密度，并且在印刷电路板 (PCB) 上的占用空间非常小。采用具有内部补偿的峰值电流模式控制架构，用于维持稳定运行和超小的输出电容。借助 EN 精密使能功能，可对器件启动和关断进行精确控制。 内置有完善的保护功能：输入欠压锁定 (UVLO)、逐周期电流限制 (OCL)、输出过压保护 (VOUT OVP)、输出欠压保护 (VOUT UVP)，和过温保护 (OTP)，以确保其在不同的工作条件下保持安全、可靠运行。 |
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JBL102E
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JBL102E with 100 V drain-source voltage, 246 A continuous drain current, 2.0 mOhm on-resistance at 10 V gate-source voltage, and low gate charge for high-efficiency power switching applications. |
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2N7002E
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SLKOR
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N-Channel Power MOSFET, VDS=60V, ID=300mA, RDS(ON)<3Ω@VGS=10V, RDS(ON)<3.5Ω@VGS=5V, Surface mount package. |
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2N7002E
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET in SOT-23 package with 2.8 ohm RDS(on) at 10 V VGS, low threshold voltage of 2 V typ, 25 pF input capacitance, and 1200V ESD protection, suitable for high-speed switching applications. |
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JPCR1002ECT
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Jiangsu JieJie Microelectronics Co Ltd
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Plastic-encapsulated TO-263 surface-mount hyperfast soft recovery rectifier with 200V repetitive peak reverse voltage, 10A average forward current, low forward voltage, and epitaxial planar technology for high-frequency switching power supplies. |
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SF502ED
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Microdiode Semiconductor
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High current, low forward voltage, low power loss, high efficiency, surge capable, high temp soldering, any position. |
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JVL102E
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JVL102E with 100V drain-source voltage, 2.1mOhm on-resistance at 10V gate-source voltage, 246A continuous drain current, and low gate charge for high-efficiency power switching applications. |
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ETA6002E8A
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eta SEMICONDUCTOR
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2.5A, 3MHz switching Li-Ion battery charger with dynamic power path management in ESOP-8 package, featuring up to 95% efficiency, integrated 50mΩ power path MOSFET, programmable charging current, and no external sense resistor requirement. |
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SF302ED
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Microdiode Semiconductor
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High current, low voltage drop, high efficiency, surge capability, any mounting position. |
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KP522302E/08E
