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01T1001JF
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Vishay Dale
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Thermistors - NTC, Sensors, Transducers, THERM NTC 1K OHM 5% 30 AWG RAD |
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01T1002FF
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Vishay Dale
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Thermistors - NTC, Sensors, Transducers, THERM NTC 10K OHM 1% 30 AWG RAD |
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01T1002JF
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Vishay Dale
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Thermistors - NTC, Sensors, Transducers, THERM NTC 10K OHM 5% 30 AWG RAD |
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AKP01T13B
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 100V drain-source voltage, 135A continuous drain current, 4.3mΩ RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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AKP01T13D
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 100V drain-source voltage, 135A continuous drain current, 4.5mΩ RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification. |
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AKP01T11
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AK Semiconductor
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N-Channel Super Trench MOSFET with 100V VDS, 108A ID, 5.7mΩ typical RDS(on) at VGS=10V, optimized for high-frequency switching and synchronous rectification, featuring low gate charge and 175°C operating temperature. |
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AKP01T15
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP01T15 with 100V VDS, 150A ID, RDS(on) less than 3.8mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
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AKP01T18
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 100V drain-source voltage, 180A continuous drain current, and 2.8mΩ typical RDS(on) at 10V VGS, optimized for high-frequency switching and synchronous rectification applications. |
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AKP01T12
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 100V drain-source voltage, 129A continuous drain current, 4.5mΩ typical RDS(ON) at 10V VGS, and 84.7nC total gate charge, suitable for high-frequency switching and synchronous rectification applications. |
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AKP01T13A
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AK Semiconductor
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AKP01T13A N-Channel Super Trench Power MOSFET with 100V drain-source voltage, 130A continuous drain current, 4.6mΩ RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
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AKP01T11D
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP01T11D with 100V drain-source voltage, 108A continuous drain current, 5.7mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
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AKP01T18D
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP01T18D with 100V VDS, 180A ID, and RDS(on) less than 3.0mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification applications. |
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AKP01T13
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 100V VDS, 135A ID, RDS(on) less than 4.5mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
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AKP01T12D
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AK Semiconductor
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AKP01T12D N-Channel Super Trench Power MOSFET with 100V drain-source voltage, 129A continuous drain current, 4.5mΩ typical RDS(on) at 10V VGS, and 84.7nC total gate charge, optimized for high-frequency switching applications. |
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AKP01T18T
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 100V drain-source voltage, 180A continuous drain current, 3.0mΩ RDS(ON) at VGS=10V, 158nC total gate charge, and 175°C maximum operating temperature. |
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ULC0501T1
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Leiditech
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ULC0501T1 is an ultra low capacitance TVS diode array in SOD-523 package, offering 40 W peak pulse power per line, 5 V working voltage, low clamping voltage, and typical capacitance of 0.45 pF for high-speed I/O protection. |
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AKP01T13B
