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01H-- Datasheets (22)

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Part	Manufacturer	Description	Datasheet Type	PDF
AK01H13WD	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK01H13WD with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.2mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	Original	PDF
AD-MMBT5401-H	JCET Group	PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching.	Original	PDF
AK01H10D	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 9.9mΩ typical RDS(ON) at 10V VGS, featuring high ESD capability and low gate charge in a TO-263-2L package.	Original	PDF
NCE01H10	NCEPOWER	NCE01H10 is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 9.9mΩ typical at VGS=10V, designed for high-efficiency power switching applications.	Original	PDF
AK01H10	AK Semiconductor	AK01H10 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 13mΩ maximum RDS(ON) at 10V VGS, featuring high ESD capability and optimized for power switching applications.	Original	PDF
AK01H13D	AK Semiconductor	AK01H13D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications.	Original	PDF
AK01H14D	AK Semiconductor	AK01H14D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 5.5mΩ at VGS=10V, and high ESD capability in a TO-263-2L package.	Original	PDF
AK01H11	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK01H11 with 100V drain-source voltage, 110A continuous drain current, and 7.5mΩ typical RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high switching efficiency.	Original	PDF
AK01H21T	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK01H21T with 100V VDS, 210A ID, and RDS(ON) of 3.1mΩ at VGS=10V, featuring high cell density design, low gate charge, and optimized for high efficiency power switching applications.	Original	PDF
NCE01H13	NCEPOWER	NCE01H13 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V gate-source voltage, featuring advanced trench technology for low on-resistance and high switching performance.	Original	PDF
AK01H29TC	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK01H29TC with 100V VDSS, 290A ID, and RDS(ON) of 2.7mΩ at VGS=10V, featuring high cell density design for low on-resistance and optimized performance in motor drives and power switching applications.	Original	PDF
AK01H14	AK Semiconductor	AK01H14 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, and 4.6mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications.	Original	PDF
NCE01H10D	NCEPOWER	NCE01H10D is a channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and low on-state resistance of 9.9mΩ typical at VGS=10V, featuring advanced trench technology for high efficiency in power switching applications.	Original	PDF
AK01H16	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK01H16 with 100V drain-source voltage, 160A continuous drain current, and 3.8mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and high ESD capability in a TO-220-3L package.	Original	PDF

AK01H29T	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK01H29T with 100V VDSS, 290A ID, and RDS(ON) of 2.4mΩ typical at VGS=10V, featuring high density cell design for low on-resistance and optimized performance in power switching applications.	Original	PDF
AK01H13	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	Original	PDF
NCE01H13D	NCEPOWER	NCE01H13D is an N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	Original	PDF
NCE01H11	NCEPOWER	NCE01H11 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 110A continuous drain current, 6.8mΩ typical RDS(ON) at VGS=10V, and advanced trench technology for low gate charge and high efficiency in power switching applications.	Original	PDF
AK01H14C	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET AK01H14C with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 6.0mΩ at VGS=10V, advanced trench technology, low gate charge, and high ESD capability.	Original	PDF
AK01H21TC	AK Semiconductor	N-Channel Enhancement Mode Power MOSFET with 100V VDSS, 210A ID, and 3.3mΩ typical RDS(ON) at VGS=10V, utilizing trench technology for low on-resistance and high efficiency in power switching applications.	Original	PDF

01H-- Price and Stock

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Littelfuse Inc 0313001.HXP FUSE GLASS 1A 250VAC 3AB 3AG
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DigiKey	0313001.HXP	Bulk	12,675		1	1 $1.65 10 $1.26 100 $0.97 1000 $0.83 10000 $0.83	Buy Now
Newark ()	0313001.HXP	Bulk	3,992		1	1 $1.92 10 $1.92 100 $1.06 1000 $0.97 10000 $0.93	Buy Now
	0313001.HXP	Bulk	445		1	1 $1.72 10 $1.26 100 $0.87 1000 $0.67 10000 $0.63	Buy Now
Bisco Industries	0313001.HXP		6			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics ()	0313001.HXP		215			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	0313001.HXP		190		1	1 $1.13 10 $1.13 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
TME	0313001.HXP		271		1	1 $1.17 10 $1.17 100 $0.67 1000 $0.44 10000 $0.44	Buy Now
Vishay Semiconductors VS-1EQH01HM3/H DIODE STANDARD 100V 1A DO219AD
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DigiKey ()	VS-1EQH01HM3/H	Tape & Reel	11,586		4,500	1 - 10 - 100 - 1000 - 10000 $0.10	Buy Now
	VS-1EQH01HM3/H	Digi-Reel	11,586		1	1 $0.48 10 $0.30 100 $0.19 1000 $0.14 10000 $0.14	Buy Now
TDK Corporation C1608NP01H391J080AA CAP CER 390PF 50V NP0 0603
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DigiKey ()	C1608NP01H391J080AA	Cut Tape	6,188		1	1 $0.13 10 $0.07 100 $0.04 1000 $0.03 10000 $0.03	Buy Now
	C1608NP01H391J080AA	Tape & Reel	6,188		4,000	1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
Avnet Abacus	C1608NP01H391J080AA			112 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TDK Corporation C3216NP01H333J085AA CAP CER 0.033UF 50V NP0 1206
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	C3216NP01H333J085AA	Digi-Reel	3,380		1	1 $0.55 10 $0.33 100 $0.22 1000 $0.18 10000 $0.18	Buy Now
Avnet Abacus	C3216NP01H333J085AA	Tape & Reel		33 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Semiconductors VS-8CSH01HM3/86A DIODE ARRAY GP 100V 4A TO277A
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DigiKey ()	VS-8CSH01HM3/86A	Cut Tape	2,599		1	1 $1.86 10 $1.18 100 $0.79 1000 $0.62 10000 $0.62	Buy Now
	VS-8CSH01HM3/86A	Digi-Reel	2,599		1	1 $1.86 10 $1.18 100 $0.79 1000 $0.62 10000 $0.62	Buy Now
	VS-8CSH01HM3/86A	Tape & Reel	1,500		1,500	1 - 10 - 100 - 1000 - 10000 $0.48	Buy Now

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01H-- Search Results

01H-- Datasheets (22)

01H-- Price and Stock

Littelfuse Inc 0313001.HXP

Vishay Semiconductors VS-1EQH01HM3/H

TDK Corporation C1608NP01H391J080AA

TDK Corporation C3216NP01H333J085AA

Vishay Semiconductors VS-8CSH01HM3/86A