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    01H-- Search Results

    01H-- Datasheets (22)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge AK01H13WD
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK01H13WD with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.2mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge AK01H13D
    		AK Semiconductor AK01H13D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications. Original PDF
    badge AK01H10
    		AK Semiconductor AK01H10 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 13mΩ maximum RDS(ON) at 10V VGS, featuring high ESD capability and optimized for power switching applications. Original PDF
    badge AK01H14D
    		AK Semiconductor AK01H14D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 5.5mΩ at VGS=10V, and high ESD capability in a TO-263-2L package. Original PDF
    badge AK01H11
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK01H11 with 100V drain-source voltage, 110A continuous drain current, and 7.5mΩ typical RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high switching efficiency. Original PDF
    badge NCE01H13D
    		NCEPOWER NCE01H13D is an N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge AW93001HDNR
    		Shanghai Awinic Technology A Low Power One-key Capacitor Touch Sensor Original PDF
    badge AK01H29T
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK01H29T with 100V VDSS, 290A ID, and RDS(ON) of 2.4mΩ typical at VGS=10V, featuring high density cell design for low on-resistance and optimized performance in power switching applications. Original PDF
    badge AK01H13
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge NCE01H11
    		NCEPOWER NCE01H11 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 110A continuous drain current, 6.8mΩ typical RDS(ON) at VGS=10V, and advanced trench technology for low gate charge and high efficiency in power switching applications. Original PDF
    badge AK01H21TC
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET with 100V VDSS, 210A ID, and 3.3mΩ typical RDS(ON) at VGS=10V, utilizing trench technology for low on-resistance and high efficiency in power switching applications. Original PDF
    badge AK01H14C
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK01H14C with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 6.0mΩ at VGS=10V, advanced trench technology, low gate charge, and high ESD capability. Original PDF
    badge AK01H10D
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 9.9mΩ typical RDS(ON) at 10V VGS, featuring high ESD capability and low gate charge in a TO-263-2L package. Original PDF
    badge NCE01H10
    		NCEPOWER NCE01H10 is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 9.9mΩ typical at VGS=10V, designed for high-efficiency power switching applications. Original PDF
    badge AD-MMBT5401-H
    		JCET Group PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching. Original PDF
    badge AK01H14T
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK01H14T with 100V drain-source voltage, 140A continuous drain current, and 4.5mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications. Original PDF
    badge AK01H14
    		AK Semiconductor AK01H14 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, and 4.6mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications. Original PDF
    badge NCE01H10D
    		NCEPOWER NCE01H10D is a channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and low on-state resistance of 9.9mΩ typical at VGS=10V, featuring advanced trench technology for high efficiency in power switching applications. Original PDF
    badge AK01H21T
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK01H21T with 100V VDS, 210A ID, and RDS(ON) of 3.1mΩ at VGS=10V, featuring high cell density design, low gate charge, and optimized for high efficiency power switching applications. Original PDF
    badge NCE01H13
    		NCEPOWER NCE01H13 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V gate-source voltage, featuring advanced trench technology for low on-resistance and high switching performance. Original PDF
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    01H-- Price and Stock

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    TDK Corporation C1005NP01H151J050BA

    CAP CER 150PF 50V NP0 0402
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    DigiKey () C1005NP01H151J050BA Cut Tape 27,191 1
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    Newark C1005NP01H151J050BA Cut Tape 2,160 10
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    Avnet Abacus C1005NP01H151J050BA Tape & Reel 13 Weeks 10,000
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    TDK Corporation C1005NP01H070D050BA

    CAP CER 7PF 50V NP0 0402
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    DigiKey () C1005NP01H070D050BA Cut Tape 14,470 1
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    C1005NP01H070D050BA Cut Tape 9,900 10
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    TDK Corporation C1005NP01H102J050BA

    CAP CER 1000PF 50V NP0 0402
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    DigiKey () C1005NP01H102J050BA Digi-Reel 9,229 1
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    C1005NP01H102J050BA Cut Tape 9,229 1
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    Avnet Americas C1005NP01H102J050BA Tape & Reel 20,000 12 Weeks 10,000
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    Newark C1005NP01H102J050BA Cut Tape 42,810 10
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    Avnet Abacus C1005NP01H102J050BA Tape & Reel 13 Weeks 10,000
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    Vishay Semiconductors VS-6ESH01HM3-86A

    DIODE GEN PURP 100V 6A TO277A
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    DigiKey () VS-6ESH01HM3-86A Cut Tape 1,959 1
    • 1 $0.56
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    VS-6ESH01HM3-86A Tape & Reel 1,500 1,500
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    OMRON Industrial Automation Z-01HW22

    SWITCH SNAP ACT SPDT 0.1A 125V
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    DigiKey Z-01HW22 Bulk 83 1
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