01FEB2012 Search Results
01FEB2012 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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pm6652
Abstract: PINEVIEW-D
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PM6652 pm6652 PINEVIEW-D | |
Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 2 A Target specification Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic |
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2ST3360 2ST3360 | |
Contextual Info: STB30NF20L N-channel 200 V, 0.065 Ω, 30 A STripFET Power MOSFET in D2PAK package Datasheet — production data Features Order code VDSS RDS on ID PTOT STB30NF20L 200 V 0.075 Ω 30 A 150 W TAB • Gate charge minimized ■ 100% avalanche tested ■ Excellent figure of merit (RDS* Qg) |
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STB30NF20L | |
Contextual Info: PM8903 3 A step-down monolithic switching regulator Features • Integrated 35 mΩ MOSFETs for high efficiency ■ 3 A continuous output current ■ 2.8 V to 6 V input voltage VIN ■ 2.9 V to 5.5 V supply voltage (VCC) ■ Adjustable output voltage down to 0.6 V |
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PM8903 | |
Contextual Info: STH260N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet — production data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 2.4 mΩ 180 A • Low gate charge ■ Very low on-resistance |
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STH260N6F6-2 | |
Contextual Info: STEVAL-MKI106V1 LSM303DLHC adapter board for a standard DIL24 socket Data brief Description The STEVAL-MKI106V1 is an adapter board designed to facilitate the evaluation of MEMS devices in the LSM303DLHC product family. The board offers an effective solution for fast system |
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STEVAL-MKI106V1 LSM303DLHC DIL24 STEVAL-MKI106V1 STEVALMKI109V2 DocID22103 | |
Contextual Info: STEVAL-IPE010V2 Energy meter demonstration kit motherboard based on the STPMC1 Data brief Features • Vnom: 230 VRMS ■ Inom CT: 1 A Imax 30 A ■ Inom Sh: 5 A (Imax 80 A) ■ fLIN: 50 / 60 ± 10% Hz ■ Operating temperature: -40 - +85 °C ■ RoHS compliant |
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STEVAL-IPE010V2 | |
transistor st 431Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 ) s ( ct u d o 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage |
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2ST3360 2ST3360 transistor st 431 | |
schematic diagram intel atomContextual Info: PM6652 Single-phase controller for Intel MVP 6.5 render voltage regulator, CPU and VR11 CPU Datasheet − production data Features • 4.5 V to 36 V input voltage range ■ 0.3 V to 1.5 V output voltage range ■ IMVP6.5 GPU/CPU and VR11 CPU mode selection |
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PM6652 schematic diagram intel atom | |
Contextual Info: ST8R00 Micropower 1 A synchronous step-up DC-DC converter Features • Output voltage adjustable from 6 V to 12 V ■ Output voltage accuracy: ± 2% ■ Output current up to 1 A ■ Low ripple voltage: 5 mV typ. ■ Synchronous rectification ■ High 90% efficiency: VO = 9 V (typ.) |
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ST8R00 ST8R00 | |
Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic |
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2ST3360 2ST3360 | |
Contextual Info: ST8R00 Micropower 1 A synchronous step-up DC-DC converter Features • Output voltage adjustable from 6 V to 12 V ■ Output voltage accuracy: ± 2% ■ Output current up to 1 A ■ Low ripple voltage: 5 mV typ. ■ Synchronous rectification ■ High 90% efficiency: VO = 9 V (typ.) |
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ST8R00 ST8R00 | |
Contextual Info: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic |
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2ST3360 2ST3360 | |
LSM303DLHC
Abstract: STEVAL-MKI106V1 LSM303 LSM303D DIL-24
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STEVAL-MKI106V1 LSM303DLHC DIL24 STEVAL-MKI106V1 LSM303 LSM303D DIL-24 | |
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Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness |
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STH260N6F6-2 260N6F6 | |
Contextual Info: ECMF02-2BF3 Dual line IPAD , common mode filter with ESD protection for high speed serial interface Data brief Features • Very large differential bandwidth above 5 GHz ■ High common mode attenuation: - 23 dB at 900 MHz. ■ High common mode attenuation: |
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ECMF02-2BF3 | |
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC - ALL RIGHTS RESERVED. 1 REVISIONS DIST - P LTR A DESCRIPTION DATE REVISED PER ECR-13-004439 DWN APVD RS 20MAR2013 DD CENTER GRAVITY 4.91 D 15.30 1. MATERIAL AND FINISH: |
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ECR-13-004439 20MAR2013 2002/95/EC ETA-48I 330mm. 01FEB2012 | |
PINEVIEW-D
Abstract: RBC34 OSC500
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PM6652 PINEVIEW-D RBC34 OSC500 |