01APR1 Search Results

171822

Contextual Info: THIS DRAWING 15 UNPUBLISHED. RELEASED COPYRIGHT FOR ALL F T S T PUBLICATION RIGHTS REVISIONS RESERVED. "SÄTT DESCRIPTION LTR F2 REVISED PER ECO-11-005140 01APR11 DWN APVO HMR RK ±0.3 ±0.3 0.5. CS3E8-»-*- C I R C U I T No. ^0. 2 ±0.3 4.2 1 9 . 7 K h L- - K

1-172169-9

Abstract: UL94V-0 172169-1 ct5t
Contextual Info: crcrr RE LEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED, c COPYRIGHT REVISIONS ALL RIGHTS RESERVED. LTR DESCRIPTION D2 2 3 .7 DATE DWN APVD 01APR11 RK HMR REVISED PER ECQ-11-005140 ± 0.4 ±0.4 9 .3 CCAVITY MARIO -V fc." '7s' - f “'" O “O ^ — “O " 1!

Contextual Info: crcrr RE LEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED, c COPYRIGHT REVISIONS ALL RIGHTS RESERVED. LTR DESCRIPTION D2 2 3 .7 DATE DWN APVD 01APR11 RK HMR REVISED PER ECQ-11-005140 ± 0.4 ±0.4 9 .3 CCAVITY MARIO -V fc." '7s' - f “'" O “O ^ — “O " 1!

Contextual Info: F-214 Rev 01APR14 FTSH–110–01–L–DV FTSH–120–01–F–DV FTSH–125–01–L–DV–EJ (1,27 mm) .050" SMT MICRO HEADER SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?FTSH Insulator Material: Black Liquid Crystal Polymer

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 5 6 3 2 RELEASED FOR PUBLICATION By - REVISIONS DIST ALL RIGHTS RESERVED. 00 LTR DESCRIPTION REVISED PER HOUSING: CONTACT: ECO-11-004703 DATE DWN APVD 01APR11 DH DY POLYESTER, GRAY. UL 9 4 V - 0 . P H O S P H O R BRONZE.

Contextual Info: F-214 REV 01APR14 TMM–110–01–S–D–SM TMM–112–01–F–S–SM TMM–130–05–L–S–SM (2,00 mm) .0787" TMM SERIES LOW PROFILE SMT HEADER SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?TMM Insulator Material:

Contextual Info: I L THIS DRAWING IS UNPUBLISHED. c Dl ST LOC RELEASED FOR PUBLICATION R E V 1 S IO N S ALL RIGHTS RESERVED. C O P Y R IG H T C I RCUIT _li ! p LT R D E S C RIP TIO N AB6 I D E N T ! F I C A T I ON R E V IS E D DWN DATE 01APR11 P E R EC O -11-005140 APVD

MAG45

Abstract: 250 ohm resistor MAG45 rj45 14.5010
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 5 2 3 - .- LOC By - DIST 22 AA ALL RIGHTS RESERVED. R E V IS IO N S LTR DESCRIPTION K1 ECHANICAL: 0.015 1 .265 + - 0 .0 0 0 REVISED PER DATE DWN RK HMR 01APR11 ECO-1 1 - 0 0 5 1 40 APVD

Contextual Info: VS-120NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 120 A FEATURES Lug terminal anode • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability

Contextual Info: VS-182NQ030PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 180 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability

Contextual Info: SQJ942EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.022 0.011 RDS(on) () at VGS = 4.5 V 0.026 0.013 ID (A) 15 Configuration

Contextual Info: SPICE Device Model SiR414DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SQ4483BEEY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

ECO-11-005140

Contextual Info: DO D NOT SCALE I N MENS IONS METR mm THIRD G ANGLE P R O J E C T I ON N OT E S : F OR USE AND STANDARD BRASS I ,6 <c MA X . ACC MINIATURE P H . BRONZE ACC MUST 0 77 I WITH APPLICATORS APPLICATORS ASTM GAGE REELED co ON B36 ASTM ALLOY RIGHT-LEPT A 260.

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin

Contextual Info: H M & 4 3 T H IR D A N G L E P R O J E C T IO N ¿ a . P R IN T L — !•■■■■■■ . SCALE ¡ 9.1 14-56 so <r> iJMu : fé D IM E N S IO N S IN MM If ) 10.35 DO NOT (2 ^ 8 ) 1 0 .2 0 (TOLERANCE ; ± 0.2 > A3 LTR. REV ISED P E R ECO-11-005030

Contextual Info: D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL By C O P Y R IG H T P U B L IC A T IO N R IG H TS LOG R E V IS IO N S D IS T RESERVED. - LTR D E S C R IP T IO N INIT IA L NOTE: DATE RELEASE DWN 1. PACKAGING ACC. TO TE SPEC. 1 07-1 8032 BUNDLE EVERY 25 ASSEMBLIES WITH A RUBBER BAND

Contextual Info: BZD27C3V6P-M to BZD27C200P-M Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • Sillicon planar zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability

Contextual Info: VS-2EJH01-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • Low forward voltage drop Cathode Anode • Low leakage current

WSLP4026

Contextual Info: WSLP4026 www.vishay.com Vishay Dale Power Metal Strip Resistors, Very High Power to 7 W , Low Value (down to 0.0005 ), Surface Mount FEATURES Available • High power to foot print size ratio • Ideal for all types of current sensing, voltage division and pulse applications including

MEPIC

Contextual Info: MEPIC www.vishay.com Vishay Sfernice Massive Electro-Pyrotechnic Initiator Chip Resistor FEATURES • Wraparound or flip chip versions • Firing energy down to 1.5 mJ • Firing time down to 250 s • Ohmic value: 1  to 8  ± 10 % typical (1) • Joule effect ignition or flash

Contextual Info: VS-3EJH01-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 3 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature Cathode • Low forward voltage drop Anode • Low leakage current

Contextual Info: SQR50N04-3m8_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model SiR158DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C