01AC09 Search Results
01AC09 Datasheets Context Search
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Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320 |
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ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT TechnologyContextual Info: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have |
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01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology |