VS4401ATH
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VANGUARD
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40V/130A N-Channel Advanced Power MOSFET with 1.4 mΩ typical RDS(on) at VGS=10V, 400A silicon-limited current, TO-220AB package, and 375W power dissipation at 25°C. |
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SG24701AT G
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JWD
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Single port magnetic module for 100/1000 Base-T Ethernet applications, featuring 350 uH inductance, up to 1500 V isolation, support for PoE 15W or 4PPoE 90W, and operating temperature from -40 to 85 °C. |
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SG48001AT G
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JWD
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Dual-port 100/1000 Base-T SMD Ethernet transformer with isolation, RoHS compliant, supports PoE 15W or 4PPoE 90W, operating temperature 0 to 70°C or -40 to 85°C, 1500V hipot isolation, designed for IEEE 802.3 applications. |
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JMSH0601ATLQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package, featuring 328A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for automotive applications. |
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JMSH1001ATL
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 1.3mΩ N-channel Power MOSFET in PowerJE®10x12 package with 411A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management and motor driving applications. |
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JMSH0601ATL
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package with 348A continuous drain current, low gate charge, and ultra-low ON-resistance for power management and switching applications. |
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JMSH0401ATL
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Jiangsu JieJie Microelectronics Co Ltd
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40V 1.0mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package with 336A continuous drain current, ultra-low RDS(ON), low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSH1001ATLQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in PowerJE®10x12 package with 1.3 mΩ typical RDS(ON) at 10V VGS, 479A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0401ATSQ
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Jiangsu JieJie Microelectronics Co Ltd
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40V 0.9mΩ sTOLL N-Ch Power MOSFET in PowerJE7x8 package, with 352A continuous drain current, ultra-low RDS(ON), standard threshold VGS, and AEC-Q101 qualified for automotive applications. |
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SG24F01AT G
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JWD
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Single port SMD Ethernet transformer module SG24F01AT G for 100/1000 Base-T applications, featuring 350 uH typical inductance, 1500 V isolation hipot, PoE 15W support, and compliance with IEEE 802.3 and RoHS standards. |
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JMSH0401ATLQ
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Jiangsu JieJie Microelectronics Co Ltd
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40V N-channel TOLL power MOSFET in PowerJE10x12 package with 1.0 mΩ typical RDS(ON) at 10V VGS, 337A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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VS4401ATH
