MS2H40120G1
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Maplesemi
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1200V silicon carbide Schottky diode with 53A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
Original |
PDF
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MS2H10120G1
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Maplesemi
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1200V silicon carbide diode with 10A continuous forward current, fast switching, low forward voltage of 1.5V to 3.0V, and high-temperature operation up to 175°C, suitable for power factor correction and motor drives. |
Original |
PDF
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MSH20120G1
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Maplesemi
|
1200V silicon carbide Schottky diode with 20A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
Original |
PDF
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MSB20120G1
|
|
Maplesemi
|
1200V silicon carbide Schottky diode with 20A continuous forward current, high-speed switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
Original |
PDF
|
|
|
MSB10120G1
|
|
Maplesemi
|
1200V silicon carbide Schottky diode with 10A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for automotive and power applications. |
Original |
PDF
|
|
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