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01F7590
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Ohmite
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Rheostats / Wirewound Potentiometers |
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103.09KB |
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AZ5325-01F
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SLKOR
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0.35pF, 5V, ±20kV, 4.5A, -55 to 125°C |
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KTH1701FH-ST3
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Quanzhou KTsense Microelectronics Co..Ltd
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高性能、低功耗、全极磁场检测霍尔开关传感器 |
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N32G401F8S7-1
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Nations Tech
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32-bit ARM Cortex-M4F, 72MHz, FPU, DSP, 64KB flash, 16KB SRAM, 12bit ADC, comparators, U(S)ART, I2C, SPI. |
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KTH1701FH-TO3
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Quanzhou KTsense Microelectronics Co..Ltd
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高性能、低功耗、全极磁场检测霍尔开关传感器 |
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GS1001FL
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Jiangsu JieJie Microelectronics Co Ltd
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Surface mount general purpose rectifier in SOD-123FL package with 94V-0 flammability rating, glass passivated junction, lead-free compliant, available in voltage ratings from 50V to 1000V, rated for 1.0A average forward current. |
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P0501FAP
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Jiangsu JieJie Microelectronics Co Ltd
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Pxxx1FAP series thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under over-surge conditions.Pxxx1FAP series thyristors are unidirectional semiconductor devices designed for transient surge protection, featuring peak off-state voltage up to 250V, fast ns-level response, high surge current capability, and low capacitance, suitable for robust overvoltage protection in electronic circuits.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under overvoltage conditions.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring ns-level response, 50 A peak pulse current (10/1000 μs), low capacitance, and fail-short behavior under over-surge conditions. |
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P2501FAP
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Jiangsu JieJie Microelectronics Co Ltd
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Pxxx1FAP series thyristors are unidirectional semiconductor devices designed for transient surge protection, featuring peak off-state voltage up to 250V, fast ns-level response, high surge current capability, and low capacitance, suitable for robust overvoltage protection in electronic circuits. |
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P0401FAP
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Jiangsu JieJie Microelectronics Co Ltd
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Pxxx1FAP series thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under over-surge conditions.Pxxx1FAP series thyristors are unidirectional semiconductor devices designed for transient surge protection, featuring peak off-state voltage up to 250V, fast ns-level response, high surge current capability, and low capacitance, suitable for robust overvoltage protection in electronic circuits.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under overvoltage conditions.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring ns-level response, 50 A peak pulse current (10/1000 μs), low capacitance, and fail-short behavior under over-surge conditions. |
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N32G401F6Q7
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Nations Tech
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32-bit ARM Cortex-M4F, 72MHz, FPU, DSP, 64KB flash, 16KB SRAM, 12bit ADC, comparators, U(S)ART, I2C, SPI. |
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P1801FAP
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Jiangsu JieJie Microelectronics Co Ltd
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Pxxx1FAP series thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under over-surge conditions. |
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P1301FAP
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Jiangsu JieJie Microelectronics Co Ltd
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Pxxx1FAP series thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under over-surge conditions.Pxxx1FAP series thyristors are unidirectional semiconductor devices designed for transient surge protection, featuring peak off-state voltage up to 250V, fast ns-level response, high surge current capability, and low capacitance, suitable for robust overvoltage protection in electronic circuits.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring peak off-state voltages from 28V to 220V, fast ns-level response, high surge current handling up to 50A, low on-state voltage of 1.8V to 2.2V, and fail-short protection under overvoltage conditions.Pxxx1FAP thyristors are semiconductor components designed for transient surge protection, featuring ns-level response, 50 A peak pulse current (10/1000 μs), low capacitance, and fail-short behavior under over-surge conditions. |
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N32G401F6S7-1
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Nations Tech
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32-bit ARM Cortex-M4F, 72MHz, FPU, DSP, 64KB flash, 16KB SRAM, 12bit ADC, U(S)ART, I2C, SPI. |
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US1001FL
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Jiangsu JieJie Microelectronics Co Ltd
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Ultra fast recovery rectifier in SOD-123FL surface mount package, rated for 50V to 1000V repetitive peak reverse voltage, 1.0A average forward current, with glass passivated junction and lead-free finish. |
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AW93001FDNR
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Shanghai Awinic Technology
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A Low Power One-key Capacitor Touch Sensor |
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RS1001FL
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Jiangsu JieJie Microelectronics Co Ltd
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Surface mount fast recovery rectifier in SOD-123FL package with 94V-0 flammability rating, glass passivated junction, 1.0A average forward current, and reverse voltage ratings from 50V to 1000V. |
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KAN0654-0701F-C
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Wenzhou Gangyuan Electronics Co Ltd
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Tactile switch KAN0654-0701F-C with operating force 70±30gf, travel 0.25±0.1mm, DC 12V 50mA rating, -30°C to 80°C operating temperature, and IP67 sealing for mechanical contact applications. |
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AK2301F
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AK Semiconductor
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AK2301F P-Channel enhancement mode power MOSFET with -20V drain-source voltage, -2A continuous drain current, low RDS(ON) of 120mΩ at VGS=-4.5V, suitable for load switch and PWM applications in SOT-23 package. |
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UF1001FL
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SUNMATE electronic Co., LTD
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Ultra fast surface mount diodes in SOD-123FL package, rated for 1.0A average forward current and 100 to 800V repetitive peak reverse voltage, with low reverse leakage and fast recovery time, suitable for high-frequency applications. |
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NCE2301F
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2A continuous drain current, RDS(ON) less than 150mΩ at VGS=-2.5V, available in SOT-23 package. |
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AZ5325-01F
