00S733 Search Results

175 WIV High Switching

Abstract: FDH1000 FDLL1000
Contextual Info: 04 FAIRCHILD SEMICONDUCTOR DE | 3 4 b 1 b 7 4 00S733Ô 3 FDH1000/FDLL1000 FAIRCHILD High Conductance Switching Diodes A S c h lu m b e rg e r C o m p a n y T-o5-oq • V p . . . 1 V m a x @ 5 0 0 m A PACKAGES • Q s •. ■1 0 0 p C (m a x ) FDH1000 FDLL1000

Contextual Info: 3875081 G E SOLID STATE 01E Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D • 19874 D -WII HAS 43D2271 00S733b Ô Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs In frare d E m itting Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide,

Contextual Info: ADV MI CRO PLA/PLE/ARRAYS Tb 0^ 732^ 0HS7S5b , T-46- 13- 47' 24-P in XO R A m P A L 20X R P 10 F a m ily 24-Pin IMOX Programmable Array Logic PAL Elements D istinctive Characteristies • • • • • Post Programming Functional Yield (PPFY) of 99.9%

Contextual Info: HM51W4260C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-292B Z Rev. 2.0 Jul. 18, 1996 Description The Hitachi HM 51W 4260C is CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51W 4260C has realized higher density, higher performance and various functions by employing 0.8 |im CMOS process