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008A
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Essentra Components
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TAPERED CAP - OD RANGE: 8.4 - 10 |
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NCE6008AS
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NCEPOWER
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60V, 8A NCE6008AS enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 13.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, suitable for power switching and load switch applications in SOP-8 package. |
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JMTG3008A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 40A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6m ohm at VGS=10V, available in PDFN5x6-8L package, suitable for load switch, PWM, and power management applications. |
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JMSL1008AC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 6.5 mΩ typical RDS(ON) at VGS = 10V, 114A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. |
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JMSH1008AE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with 6.8 mΩ typical RDS(ON) at 10V VGS, 112A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. |
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JMSL1008AE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 6.5 mOhm typical RDS(on) at 10V VGS, 114A continuous drain current, low gate charge, and available in TO-220-3L and TO-263-3L packages. |
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JMSL1008AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-Ch Power MOSFET in PDFN5x6-8L package with 6.0 mΩ typical RDS(ON) at VGS = 10V, 88A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSH1008AC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with 6.8 mOhm typical RDS(ON) at 10V VGS, 112A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. |
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JMSL1008AP
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in SOP-8L package with 7.4 mΩ RDS(ON) at VGS = 10V, 12A continuous drain current, low gate charge, and ultra-low on-resistance for power management and motor driving applications. |
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AK6008AS
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AK Semiconductor
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AK6008AS N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 8A continuous drain current, RDS(ON) less than 20mΩ at VGS=10V, and low gate charge for efficient switching applications. |
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PBC-1008A-R28T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. |
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JMTP3008A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 15A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.7mΩ at VGS=10V and 12.5mΩ at VGS=4.5V, featuring SOP-8 package, advanced trench technology, low gate charge, and 100% UIS tested. |
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PBC-1008A-R15T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. |
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PBC-1008A-R22T
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JWD
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Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. |
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JMSL1008AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ typical RDS(ON) at 10V VGS, 98A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH1008AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-Ch Power MOSFET in TO-252-3L package with 6.9 mΩ RDS(ON) at VGS = 10V, 92A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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PBC-1008A-R30T
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JWD
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Power Bead Inductor PBC-1008A-RXXT series features single turn construction, ferrite core, ultra low DCR, high energy density, flat inductance over frequency, rated current up to 64A, operating temperature from -40°C to +125°C, and complies with AEC-Q200. |
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JMTQ3008A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 30A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6m ohm at VGS=10V, available in PDFN3x3-8L package, suitable for load switch, PWM, and power management applications. |
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JMSL1008AK
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ RDS(ON) at VGS = 10V, 82A continuous drain current, low gate charge, and 1.7 Ω gate resistance, suitable for power management and motor driving applications. |
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NCE6008AS
