005DB Search Results

Contextual Info: Temperature Variable Chip Attenuators TCAF N05 Series: DC-12GHz f\E R O FLE X Designed to vary -,005dB /dB /°C to compensate A p assion fo r p erfo rm a n ce. for temperature induced system gain variation without requiring a bias or control voltage. 3N5 These surface m ount attenuators consist o f

Contextual Info: PM* PRELIMINARY S/UNI-QUAD DATASHEET PMC-971239 PMC-Sierra, Inc. ISSUE 5 „ „ „ „ „ PM5349 S/UNI-QUAD SATURN USER NETWORK INTERFACE 155-QUAD PM5349 S/UNI-QUAD SATURN USER NETWORK INTERFACE (155-QUAD) DATASHEET PRELIMINARY ISSUE 5: JANUARY 1999 PMC-Sierra, inc.

precision Sine 1khz Wave Generator

Abstract: audio preamp CLASS A AUDIO TONE CONTROL IC precision Sine Wave Generator AN144 X9241 X9241A X9408 X9C102 Global Specialties
Contextual Info: Audio Xcellence: XDCP Signal Integrity Report Audio Characterization Report Application Note Introduction Most audio equipment testing is done on a stimulusresponse basis. A signal of known characteristics is fed to the input of the Device Under Test (DUT) and the output of

TLE4216 G

Contextual Info: tDE D I fl235bOS OOSObMl Tb2 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Intelligent Sixfold Low-Side Switch TLE 4216 Features • Double low-side switch, 2 x 0.5A • Quad low-side switch, 4 x 50 mA • Power limitation • Open-collector outputs • Overtemperature shutdown

BUK637-400A

Abstract: BUK637-400B in 4008 diode LP250 00a0B
Contextual Info: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly

three relay stabilizer circuit diagram

Abstract: RK 411 RXKL 1 RXIG 22 RHGX rxig 21 rxig 28 generators winding circuit diagrams RXIG 2 RK411
Contextual Info: Overcurrent relay and protection RXIG 2 and RAIG 1MRK 509 010-BEN Page 1 Issued December 1999 Changed since July 1998 Data subject to change without notice SE970176 Features • Single-, two- and three-phase versions for short-circuit and earth fault protection

Contextual Info: FLASH MEMORY CMOS 2M 256K X 8/128K X 16 MBM29F200TA/MBM29F200BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs