JMSH1003NE
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 3.0mΩ N-channel Power MOSFET in TO-220-3L and TO-263-3L packages with 213A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management and motor driving applications. |
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VSD003N04MS-G
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VANGUARD
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40V/58A N-Channel Advanced Power MOSFET with 3 mΩ RDS(on) at VGS=10V, TO-252 package, designed for low conduction and switching losses, featuring high avalanche energy rating and optimized gate charge. |
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JMSH1003NG
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 3.1mΩ N-channel Power MOSFET in PDFN5x6-8L package with 159A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management, DC/DC conversion, and motor driving applications. |
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3DD13003N3
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JCET Group
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NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A collector current, low saturation voltage, high speed switching, and operating temperature up to 150°C. |
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VSE003N04MSC-G
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VANGUARD
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40V/100A N-Channel Advanced Power MOSFET with typical RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN3333 package, featuring low on-resistance, fast switching, and 100% avalanche testing capability. |
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VSP003N04HS-G
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VANGUARD
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40V/33A N-Channel Advanced Power MOSFET with 2.6 mOhm RDS(on) at VGS=10V, 78A silicon-limited current, PDFN5x6 package, and 100% avalanche tested for high reliability in power switching applications. |
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VSE003N04MS-G
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VANGUARD
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40V/112A N-Channel Advanced Power MOSFET with low RDS(on) of 1.6 mΩ at VGS=10V, available in PDFN3333 package, designed for high efficiency power applications. |
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NTR4003N
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SLKOR
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JMSH1003NC
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 3.0mΩ N-channel Power MOSFET in TO-220-3L and TO-263-3L packages, with 213A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for power tools, e-vehicles, and power management applications. |
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MM32F003NW
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MindMotion Microelectronics
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32-bit, ARM Cortex-M0, 48MHz, 12-bit ADC, 16/32-bit timers, I2C/SPI/UART, 2.0-5.5V, -40°C to +105°C, QFN20/TSSOP20. |
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VSP003N04MS-G
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VANGUARD
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40V/110A N-Channel Advanced Power MOSFET with RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN5x6 package, featuring low on-resistance and high avalanche energy rating. |
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VSP003N04MST-G
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VANGUARD
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40V/150A N-Channel Advanced Power MOSFET with 1.8 mΩ typical RDS(on) at VGS=10V, PDFN5x6 package, silicon limited ID of 232A, and 202W power dissipation capability. |
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JMSH1003NE
