0029-A A1 Search Results

16c54

Abstract: 007B 24LC04B 24XX65 AN537 AN558 AN562 PIC16C54 16C5X 24XX32
Contextual Info: Using the 24XX65 and 24XX32 AN558 Using the 24XX65 and 24XX32 with Stand Alone PIC16C54 Code USING THE SMART SERIAL SERIES Smart Serial Products With the advent of CMOS silicon devices came the battery powered application. The battery powered application required more functionality and thus more power

SL32

Abstract: SL32S4A1M1A-A60 SL32T4A1M1A-A60 4A1M1A-A70
Contextual Info: SL32 S/T 4A1M1A-A60 1M X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC SL32(S/T)4A1M1A-A60 60ns 15ns 110ns SL32(S/T)4A1M1A-A70 70ns 20ns 130ns SL32(S/T)4A1M1A-A80 80ns 20ns 150ns tRAC • • • • • • • •

STI361000-60

Abstract: STI361000-70 STI361000-80
Contextual Info: STI361000 1M X 36 DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC STI361000-60 60ns 15ns 110ns STI361000-70 70ns 20ns 130ns STI361000-80 80ns 20ns 150ns SiliconTech’s STI361000 is a 1M bit x 36 Dynamic RAM high

Amphenol C146

Abstract: d-sub backshell AMPHENOL C146 10B040 009 2 VN02 006 0015 EN 175 301-801 T 1861 002 vn02 VN02 016 0003 2 contact connector 16-pol 10G00
Contextual Info: C 146 M Bezeichnung - Abbildung Description - Figure Rahmen für 2 Module Frame for 2 modules Rahmen für 3 Module Frame for 3 modules Rahmen für 5 Module Frame for 5 modules Rahmen für 7 Module Frame for 7 modules Gehäuse, siehe Seite 146–177 Housings, see page 146–177

249-2078-000

Abstract: DPX2NE-A106P67MS-33B-00 031-1271-000 CIT- 20 249-2109-000 031-1113-008 RG142 "cross reference" 0PXBNE-D8M-34P-00 DPX2NA-67 DPXBNE-57M-34S-00
Contextual Info: DPXNA/DPXNE MIL-C-81659 Cannon's DPXNA non-environmental, Type IV and DPXNE (environmental. Types II and III) rack and panel connectors are designed to meet or exceed the requirements of MIL-C-81659, Revision B. They are used in military and aerospace applications and

IR620

Abstract: th02 TOKO TK10415M
Contextual Info: TK10415M [ f M ~ — T > " 7 Î C CD TK10415M i% z < D 7 y v Ÿ — i/ 3 ^ ~ x - 7 / is < D ïï& ft m $ r f' & ü < 2 £ ii- r z > z .k & jb ' Q $ .- r < n x ' z :T ft < t î& \ " ' S f c è t t ^ Î * W p , T 145-8585 Ä Ä i 5 ^ C f f l E 3 l C S « r : T l —# + - b - § -

Contextual Info: AK63232Z 32,768 x 32 Bit CMOS I BiCMOS Static Random Access Memory M IC R O C M IT G O B P O IM IO N D E S C R IP T IO N The Accutek AK63232Z SRAM Module consists of fast high perfor­ mance SRAMs mounted on a low profile, 64 pin ZIP Board. The module utilizes four 28 pin 32K x 8 SRAMs in 300 mil SO J packages

87C571

Abstract: 0362-0129 CXA 0543 022d 0409.0154 AN434-connecting a pc keyboard to the i2c bus microcontroller 8051 multi keyboard xmtd 000D 001B
Contextual Info: Philips Semiconductors Microcontroller Products Application note Connecting a PC keyboard to the I2C-bus CONNECTING A PC KEYBOARD TO THE I2C BUS Keyboard-to-I2C Hardware Figure 4 This application note illustrates the use of a low-cost 8-bit microcontroller—the

M81659

Abstract: 249-2078-000 031-1047-003 030-1975-008 CBT-600B MS3157 CIET-16 m39029-12-149 249-2109-000 S-249-2077-000
Contextual Info: MIL-C-81659 Cannon's DPXNA non-environmental, Type IV and DPXNE (environmental, Types II and III) rack and panel connectors are designed to meet or exceed the requirements of MIL-C-81659, Revision B. They are used in military and aerospace applications and

Contextual Info: AK632256W-72 262,144 x 32 Bit CMOS/BiCMOS 72 Pin Format Static Random Access Memory UlCROCHCim CORPORATION DESCRIPTION The Accutek A K 632256W -72 SRAM Module consists o f fast high perform ance SRAM s m ounted on a low profile, 72 pin SIM Board. The module utilizes four 28 pin 256K x 4 SRAMs in 400 mil SOJ

Contextual Info: HI-8105 & HI-8106 PROGRAMMABLE DIVIDER WITH OSCILLATOR OR CLOCK PIN CONFIGURATION DESCRIPTION The HI-8105 & HI-8106 are silicon gate CMOS devices designed for 'glue' logic applications. They are simple 16 stage dividers with programmable division. The HI-8105

Contextual Info: DESCRIPTION AK632256AW 262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory MICROCIRCUIT CORPORATION The Accutek AK632256AW SRAM Module consists of eight fast high performance SRAMs mounted on a low profile, 64 pin SIM PCB. The module utilizes four 28 pin 256K x 4 SRAMs in 300 mil

TB 810

Abstract: HI-8105 HI-8105PDI HI-8105PDT HI-8105PSI HI-8105PST HI-8106 HI-8107
Contextual Info: HI-8105 & HI-8106 January 2001 DESCRIPTION PIN CONFIGURATION The HI-8105 & HI-8106 are silicon gate CMOS devices designed for 'glue' logic applications. They are simple 16 stage dividers with programmable division. The HI-8105 has a one pin oscillator while the HI-8106 receives a clock

Contextual Info: HD66520T 160-Channel 4-Level Grayscale Display Column Driver with Internal Bit-Map RAM HITACHI Description The HD66520 is a column driver for liquid crystal dot-matrix graphic displaysystems. This LSI incorporates 160 liquid crystal drive circuits and a 160 x 240 x 2-bit bit-map RAM,whichis suitable for

ef81

Abstract: 76A6 HD66520 HD66520TA0 HD66520TB0 Y160 TCA 7800 784F "FRC" "HD66520T"
Contextual Info: HD66520T 160-Channel 4-Level Grayscale Display Column Driver with Internal Bit-Map RAM Description The HD66520 is a column driver for liquid crystal dot-matrix graphic display systems. This LSI incorporates 160 liquid crystal drive circuits and a 160 x 240 × 2-bit bit-map RAM, which is suitable for

77A8

Abstract: 00A8 eecf "HD66520T"
Contextual Info: HD66520T 160-Channel 4-Level Grayscale Display Column Driver with Internal Bit-Map RAM Preliminary Description The HD66520 is a column driver for liquid crystal dot-matrix graphic display systems. This LSI incorporates 160 liquid crystal drive circuits and a

EF-01

Abstract: 78a8 ef81 78A7 address lines,data lines and control lines L238 driver 7829 76A8 77CF LS 7729
Contextual Info: HD66520T 160-Channel 4-Level Grayscale Display Column Driver with Internal Bit-Map RAM Description The HD66520 is a column driver for liquid crystal dot-matrix graphic display systems. This LSI incorporates 160 liquid crystal drive circuits and a 160 x 240 × 2-bit bit-map RAM, which is suitable for

74F604

Abstract: SF01117 N74F604D N74F604N
Contextual Info: Philips Semiconductors Product specification Dual octal latch 3-State 74F604 FEATURES PIN CONFIGURATION • High impedance NPN base inputs for reduced loading (20µA in High and Low states) • Stores 16-bit–wide Data inputs, multiplexed 8-bit outputs

Contextual Info: ^EDI _ EDI8F32256C [piFàiyiOMOT Electronic D« tig n i Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This

Contextual Info: ^EDI EDI9F321024C E IK T O O N C M SGNSL NC.I '1Megx32 SRAM Module 1 Meg x32 CMOS Static RAM Module Features The EDI9F321024C CMOS Static RAM Module is orga­ 1M egx32 bits CMOS Static nized as 1Meg x 32 bits. Random Access Memory Module The module is constructed from 3 2 128Kx8 Static RAMs in

Contextual Info: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s

05f0

Abstract: 16C54 AN511 PIC16C5X pla 007a P21A
Contextual Info: AN511 PLD Replacement Author: Sumit Mitra Microchip Technology, Inc. exclusive .OR. and one .AND. operation will be required. For example, to determine product term P3 = A3.A2.A1.A0, the expression to evaluate is: (A7:A0 .XOR. xxxx0011b) .AND. 00001111b).

SENSYM SX05

Abstract: kty81 application note b627 B628 B658 b649 pressure sensor circuit Honeywell OR SenSym KTY81 Wheatstone Bridge operational amplifier
Contextual Info: Signal Acquisition and Conditioning with Low Supply Voltages Heinz-Peter Beckemeyer Texas Instruments Deutschland GmbH June 1996 Contents 1. INTRODUCTION. 3 2. 3-V SUPPLY VOLTAGE . 4

Contextual Info: JUL i 4 ’«S3 PRELIMINARY MICRON I 64K St MíCOKUlICIOR MC SRAM MODULE X MT8LS6432 32 SRAM MODULE 64Kx 32 SRAM LOW VOLTAGE FEATURES • • • • • • • • High speed: 17,20,25, 30 and 35ns High-performance, low-power CMOS process Single +3.3V ± 0.3V power supply