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TPD2015FN
|
|
Toshiba Electronic Devices & Storage Corporation
|
Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 |
Datasheet
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|
|
TPD2017FN
|
|
Toshiba Electronic Devices & Storage Corporation
|
Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 |
Datasheet
|
|
|
MG800FXF1ZMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
Datasheet
|
|
|
MG800FXF1JMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
Datasheet
|
|
|
G875C02142DEU
|
|
Amphenol Communications Solutions
|
2.0pitch BMI cable side terminal |
PDF
|
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