000MD Search Results

Contextual Info: 000MD VIS#437573 Part Number Thermal Resistance °C/W at 150.0mm length Width Height mm mm Surface Area mm?mm 000MD 0.000 120.00 37.00 964.0 Weight Part kg/m Class 4.87 A Non-Standard Extrusions Aavid Thermalloy has over 10,000 extrusion profile designs on file, most with the extrusion die already available. These parts

Contextual Info: TUNDRA CA82C55A PROGRAMMABLE PERIPHERAL INTERFACE • Pin and functional compatibility with the industry standard 8255A • Supports 8086/8088 and 80186/188 microprocessors • Very high speed - 1 0 , 8 and 5 MHz zero wait state operation • Low power CMOS Implementation

condensateur ceramique 104

Abstract: condensateur electrolytique CNC14 CNC2 capacitor eurofarad EUROFARAD ceramic capacitor EUROFARAD capacitor CNC2 ceramic capacitor Eurofarad X7R CNC-4
Contextual Info: 'picAc tecAniquc II ^cchucal dafa J teet CNC14 X8 - CNC2 X8 - CNC4 X8 - CNC6 X8 - CNC7 X8 CONDENSATEUR CERAMIQUE / / CERAMIC CAPAÇITOR TECHNOLOGY TECHNOLOGIE Diélectrique : Céramique Classe 2 Dielectric: Class 2 Ceramic Chips Céramique Multicouche Multilayer Ceramic Chips

Contextual Info: M O S E L V IT E L IC PRELIMINARY V53C16256H 2 5 6 K x 16 FAST PAGE MODE CMOS DYNAMIC RAM 40 45 50 60 Max. RAS Access Time, Orac 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, ^ M ) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (V>c)

Contextual Info: •HYUNDAI H Y 5 3 1 0 0 0 A S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and last dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silico n gate process techno logy as well as advanced circuit techniques to provide wide operating

EPF8282

Contextual Info: FLE X 8000 Includes FLEX 8000A • OUUU Programmable Logic Device Family March 1995, ver. 6 Features. Data Sheet ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low-cost, high-density, register-rich CMOS programmable logic device family 2,500 to 16,000 usable gates

epf8050M

Contextual Info: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features D a tasheet • Prelim inary Information ■ ■ ■ Architecture Description The Altera EPF8050M device combines four EPF81188 devices and one Field Programmable Interconnect FPIC device to create a 50,000-gate

k 151 transistor

Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1
Contextual Info: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case