000726TM2FXHD Search Results
000726TM2FXHD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
marking kpContextual Info: CPH3414 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH3414 -500mA CPH3414 000726TM2fXHD marking kp | |
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Contextual Info: MCH3310 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
MCH3310 --30V --10V --10V --10V, | |
|
Contextual Info: CPH3314 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH3314 --10V --10V --10V, CPH3314 | |
marking KKContextual Info: MCH3410 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
MCH3410 000726TM2fXHD marking KK |