000719TM2FXHD Search Results
000719TM2FXHD Datasheets Context Search
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Contextual Info: CPH3307 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
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CPH3307 --10V --10V, 000719TM2fXHD | |
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Contextual Info: CPH3409 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH3409 000719TM2fXHD | |
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Contextual Info: CPH3308 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH3308 --10V --10V, CPH3307 000719TM2fXHD | |
MARKING KGContextual Info: CPH3407 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH3407 000719TM2fXHD MARKING KG | |
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Contextual Info: CPH3408 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. •4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH3408 000719TM2fXHD |